EMB10FHA Transistors Datasheet

EMB10FHA Datasheet, PDF, Equivalent


Part Number

EMB10FHA

Description

PNP -100mA -50V Complex Digital Transistors

Manufacture

ROHM

Total Page 10 Pages
Datasheet
Download EMB10FHA Datasheet


EMB10FHA
EEMMBB1100FH/AU/MUBM1B01N0N/FIHMAB/1IM0AB10AFRA
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
AEC-Q101 Qualified
Parameter
VCC
IC(MAX.)
R1
R2
Tr1 and Tr2
-50V
-100mA
2.2kW
47kW
lFeatures
1) Built-In Biasing Resistors.
2) Two DTA123J chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lOutline
EMT6
(6)
(5)
(1) (4)
(2)
(3)
EMEBM1B01F0HA
(SC-107C)
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMIBM1B01A0FARA
SOT-457 (SC-74)
lInner circuit
EMB1E0MFHBA10/ U/MUBM1B0N10FNHA
OUT
IN
GND
(6) (5)
(4)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMUBM1B01N0FNHA
SOT-363 (SC-88)
IMIBM1B0A1F0RAA
OUT
(4)
IN
(5)
GND
(6)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(1)
GND
(2)
IN
(3)
OUT
(3)
GND
(2)
IN
(1)
OUT
lPackaging specifications
Part No.
Package
EMB10FHA
UMB10NFHA
IMB10AFRA
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
B10
B10
B10
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
2012.06 - Rev.D

EMB10FHA
EMB10F/HUAM/BU1M0NB1/ 0IMNBFH10AA/ IMB10AFRA
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EEMMBB101F0HA/ /UUMMBB1100NFNHA
IIMMBB110A0FARA
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
-50
-12 to +5
-100
-100
150 (Total)*3
300 (Total)*4
150
-55 to +150
Unit
V
V
mA
mA
mW
mW
°C
°C
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Conditions
VCC = -5V, IO = -100mA
VO = -0.3V, IO = -5mA
IO / II = -5mA / -0.25mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -10mA
-
-
Transition frequency
fT *1
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min.
-
-1.1
-
-
-
80
1.54
17
-
Typ.
-
-
-0.1
-
-
-
2.2
21
250
Max.
-0.5
-
-0.3
-3.6
-0.5
-
2.86
26
-
Unit
V
V
mA
mA
-
kW
-
MHz
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/7
2012.06 - Rev.D


Features .
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