NVG800A75L4DSC Module Datasheet

NVG800A75L4DSC Datasheet, PDF, Equivalent


Part Number

NVG800A75L4DSC

Description

Dual Side Cooling Half-Bridge Power Module

Manufacture

ON Semiconductor

Total Page 13 Pages
Datasheet
Download NVG800A75L4DSC Datasheet


NVG800A75L4DSC
Automotive 750 V, 800 A
Dual Side Cooling
Half-Bridge Power Module
VE-Tract Dual
NVG800A75L4DSC
Product Description
The NVG800A75L4DSC is part of a family of power modules with
dual side cooling and compact footprints for Hybrid (HEV) and
Electric Vehicle (EV) traction inverter application.
The module consists of two Field Stop 4 (FS4) 750V Narrow Mesa
IGBTs in a halfbridge configuration. The chipset utilizes the new
narrow mesa IGBT technology in providing high current density and
robust short circuit protection with higher blocking voltage to deliver
outstanding performance in EV traction applications.
A dual side liquid cooling heatsink reference design along with a
complete inverter kit (NVG800A75L4DSCEVK) is available to
enable easier design in.
Features
DualSide Cooling
Integrated Chip Level Temperature and Current Sensor
Tvj max = 175°C for Continuous Operation
Ultralow stray inductance
Low VCESAT and Switching Losses
Automotive Grade FS4 & Fast Diode Chip Technologies
4.2 kV Isolated DBC Substrate
AEC Qualified and PPAP Capable
This Device is PbFree and is RoHS Compliant
Typical Applications
Hybrid and Electric Vehicle Traction Inverter
High Power DCDC Converter
www.onsemi.com
AHPM15CEA
CASE 100DD
© Semiconductor Components Industries, LLC, 2019
December, 2019 Rev. 1
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
1 Publication Order Number:
NVG800A75L4DSC/D

NVG800A75L4DSC
VETract Dual NVG800A75L4DSC
PIN DESCRIPTION
Pin #
Pin
1N
2P
3 H/S COLLECTOR SENSE
4 H/S CURRENT SENSE
5 H/S EMITTER SENSE
6 H/S GATE
7 H/S TEMP SENSE (CATHODE)
8 H/S TEMP SENSE (ANODE)
9~
10 L/S CURRENT SENSE
11 L/S EMITTER SENSE
12 L/S GATE
13 L/S TEMP SENSE (CATHODE)
14 L/S TEMP SENSE (ANODE)
15 L/S COLLECTOR SENSE
Pin Function Description
Low Side Emitter
High Side Collector
High Side Collector Sense
High Side Current Sense
High Side Emitter Sense
High Side Gate
High Side Temp sense Diode Cathode
High Side Temp sense Diode Anode
Phase Output
Low Side Current Sense
Low Side Emitter Sense
Low Side Gate
Low Side Temp sense Diode Cathode
Low Side Temp sense Diode Anode
Low Side Collector Sense
Materials
DBC Substrate: Al2O3 isolated substrate, basic isolation,
and copper on both sides
Lead Frame: Copper with Tin electroplating
Flammability Information
All materials present in the power module meet UL
flammability rating class 94V0
Pin Arrangement
MODULE CHARACTERISTICS
Symbol
Parameter
Tvj
TSTG
VISO
Creepage
Continuous Operating Junction Temperature range
Storage Temperature range
Isolation Voltage, DC, t = 1 s
Terminal to Terminal
Clearance
Terminal to Terminal
CTI Comparative tracking index
LsCE
RCC’+EE’
G
M
Stray Inductance
Module lead resistance, terminals chip
Module weight
M4 screws for module terminals
Min
Rating
Unit
40 to 175
°C
40 to 125
°C
4200
V
6.2 mm
3.4 mm
>600
Typ Max
8 nH
0.15 mW
75 g
2.2 Nm
www.onsemi.com
2


Features Automotive 750 V, 800 A Dual Side Coolin g Half-Bridge Power Module VE-Tract Dua l NVG800A75L4DSC Product Description Th e NVG800A75L4DSC is part of a family of power modules with dual side cooling a nd compact footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inve rter application. The module consists o f two Field Stop 4 (FS4) 750V Narrow Me sa IGBTs in a half−bridge configurati on. The chipset utilizes the new narrow mesa IGBT technology in providing high current density and robust short circu it protection with higher blocking volt age to deliver outstanding performance in EV traction applications. A dual sid e liquid cooling heatsink reference des ign along with a complete inverter kit (NVG800A75L4DSC−EVK) is available to enable easier design in. Features • D ual−Side Cooling • Integrated Chip Level Temperature and Current Sensor Tvj max = 175°C for Continuous Opera tion • Ultra−low stray inductance Low VCESAT and Switching Losses • Automotive Grade FS4 & Fast Diode Chip Techno.
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