KBL406 RECTIFIERS Datasheet

KBL406 Datasheet, PDF, Equivalent


Part Number

KBL406

Description

SILICON BRIDGE RECTIFIERS

Manufacture

EIC

Total Page 2 Pages
Datasheet
Download KBL406 Datasheet


KBL406
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
KBL400 - KBL410
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 4.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 5.15 grams
KBL
0.77 (19.56)
0.73 (18.54)
0.825 (20.95)
0.605 (15.36)
+ AC AC
1.1 (27.94)
MIN.
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
0.085 (2.16)
0.065 (1.65)
0.200 (5.08)
0.190 (4.82)
0.265 (6.73 )
0.235 (5.97)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 4 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance ( Note 1 )
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL KBL
400
VRRM
50
VRMS
35
VDC 50
IF(AV)
KBL
401
100
70
100
KBL
402
200
140
200
KBL
404
400
280
400
4.0
KBL
406
600
420
600
KBL
408
800
560
800
KBL
410
1000
700
1000
UNIT
V
V
V
A
IFSM
200
A
I2t
VF
IR
IR(H)
RθJA
TJ
TSTG
166
1.1
10
1.0
10
- 50 to + 150
- 50 to + 150
A2S
V
µA
mA
°C/W
°C
°C
Note :
1 ) Thermal resistance from Junction to Ambient with units mounted on a 3" X 3" X 0.11" THK ( 7.5cm X 7.5cm X 0.3cm ) Cu. plate.
Page 1 of 2
Rev. 02 : March 24, 2005

KBL406
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( KBL400 - KBL410 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
4.0
Mounted on
3" X 3" X 0.11" THK
( 7.5cm X 7.5cm X 0.3cm )
3.0 Cu. plate.
2.0
1.0
60 Hz, Resistive or inductive load.
0
0 25 50 75 100 125 150
CASE TEMPERATURE, ( °C)
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
175
150
TJ = 55 °C
125
100
75
50
8.3 ms SINGLE HALF SINE WAVE
25 JEDEC METHOD
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 µs
1 % Duty Cycle
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
1.0
TJ = 25 °C
0.1
0.01
0.4
06 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE, VOLTS
1.8
0.1 TJ = 25 °C
0.0
0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 24, 2005


Features www.eicsemi.com TH97/2478 TH09/2479 I ATF 0113686 SGS TH07/1033 KBL400 - KBL 410 SILICON BRIDGE RECTIFIERS PRV : 5 0 - 1000 Volts Io : 4.0 Amperes FEATURE S : * High current capability * High su rge current capability * High reliabili ty * Low reverse current * Low forward voltage drop * Ideal for printed circui t board * Pb / RoHS Free MECHANICAL DAT A : * Case : Molded plastic * Epoxy : U L94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-2 02, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mount ing position : Any * Weight : 5.15 gram s KBL 0.77 (19.56) 0.73 (18.54) 0.82 5 (20.95) 0.605 (15.36) + AC AC 1.1 ( 27.94) MIN. 1.0 (25.4) MIN. 0.052 (1.3 2) 0.048 (1.22) 0.085 (2.16) 0.065 (1. 65) 0.200 (5.08) 0.190 (4.82) 0.265 ( 6.73 ) 0.235 (5.97) Dimensions in inch es and ( millimeter ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating a t 25 °C ambient temperature unless oth erwise specified. Single phase, half wave, 60 Hz, resistive or i.
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