BAS216WS DIODE Datasheet

BAS216WS Datasheet, PDF, Equivalent


Part Number

BAS216WS

Description

HIGH SPEED SWITCHING DIODE

Manufacture

EIC

Total Page 2 Pages
Datasheet
Download BAS216WS Datasheet


BAS216WS
www.eicsemi.com
BAS216WS
PRV : 85 Volts
Io : 250 mA
HIGH SPEED SWITCHING DIODE
SOD-323
1.80
1.60
FEATURES :
* Ultra small plastic SMD package
* High switching speed: max. 4 ns
* Reverse voltage: max. 75 V
* Repetitive peak reverse voltage: max. 85 V
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
2.80
2.30
Dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 °C unless otherwise specified)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Continuous Forward Current
Maximum Non-repetitive Peak Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
t = 1 µs
t = 1 ms
t =1s
Symbol
VRRM
VR
IF
IFSM
Ptot
TJ
TSTG
Value
85
75
250
4.0
1.0
0.5
400
150
-65 to +150
Unit
V
V
mA
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS ( Ta = 25 °C unless otherwise specified)
Parameter
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Test Condition
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 25 V
VR = 75 V
VR = 25 V , Tj = 150 °C
VR = 75 V , Tj = 150 °C
VR = 0 V, f = 1 MHz
when switched from IF = 10 mA to IR = 10mA;
RL =100 ; measure at IR = 1 mA
Symbol
VF
IR
Ctot
Trr
Max.
715
855
1.00
1.25
30
1.0
30
50
1.5
4
Unit
mV
mV
V
V
nA
µA
µA
µA
pF
ns
Page 1 of 2
Rev. 01 : March 20, 2008

BAS216WS
www.eicsemi.com
RATINGS AND CHARACTERISTIC CURVES ( BAS216WS )
FIG.1 - MAXIMUM PERMISSIBLE TOTAL POWER
DISSIPATION AS A FUNCTION OF AMBIENT TEMPERATURE
500
FIG.2 - DIODE CAPACITANCE VS. REVERSE
VOLTAGE; TYPICAL VALUES
400
300
200
100
0
0 50 100 150 200
SOLDERING POINT TEMPERATURE, (°C)
f = 1MHz; Tj = 25 °C
REVERSE VOLTAGE, (V)
FIG.3 - FORWARD CURRENT VS. FORWARD
VOLTAGE ; TYPICAL VALUES
300
200 TJ = 150 °C
100 TJ = 25 °C
0
01
FORWARD VOLTAGE, (V)
2
FIG.4 - REVERSE CURRENT VS. JUNCTION
TEMPERATURE
105
104 VR = 75 V
max
103
75 V
102
typ
25 V
10
0
typ
50 100 150 200
JUNCTION TEMPERATURE, (°C)
Page 2 of 2
Rev. 01 : March 20, 2008


Features www.eicsemi.com BAS216WS PRV : 85 Volts Io : 250 mA HIGH SPEED SWITCHING DIOD E SOD-323 1.80 1.60 0.40 0.25 1.10 1. 35 0.80 1.15 FEATURES : * Ultra small plastic SMD package * High switching sp eed: max. 4 ns * Reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Pb / RoHS Free MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g 2.80 2.30 Dim ensions in millimeters 0.15(max) ABSO LUTE MAXIMUM RATINGS ( Ta = 25 °C unle ss otherwise specified) Parameter Maxi mum Repetitive Peak Reverse Voltage Max imum Reverse Voltage Maximum Continuous Forward Current Maximum Non-repetitive Peak Forward Current Power Dissipation Junction Temperature Storage Temperatu re Range t = 1 µs t = 1 ms t =1s Sym bol VRRM VR IF IFSM Ptot TJ TSTG Value 85 75 250 4.0 1.0 0.5 400 150 -65 to + 150 Unit V V mA A mW °C °C ELECTRIC AL CHARACTERISTICS ( Ta = 25 °C unless otherwise specified) Parameter Forwar d Voltage Reverse Current Diode Capacitance Reverse Recovery Time T.
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