BTP2907A3 Transistor Datasheet

BTP2907A3 Datasheet, PDF, Equivalent


Part Number

BTP2907A3

Description

General Purpose PNP Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 5 Pages
Datasheet
Download BTP2907A3 Datasheet


BTP2907A3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTP2907A3
Spec. No. : C317A3-H
Issued Date : 2002.06.11
Revised Date : 2005.06.29
Page No. : 1/5
Description
The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power
applications.
Low collector saturation voltage
High speed switching.
Complementary to BTN2222A3
Pb-free package
Symbol
BTP2907A3
Outline
TO-92
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
BTP2907A3
EBC
Limits
-60
-60
-5
-600
625
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
CYStek Product Specification

BTP2907A3
CYStech Electronics Corp.
Spec. No. : C317A3-H
Issued Date : 2002.06.11
Revised Date : 2005.06.29
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
*hFE 5
fT
Cob
Min.
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
200
-
Typ.
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-10µA
IC=-10mA
IE=-10µA
VCB=-50V
VCE=-30V, VBE(OFF)=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100µA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCB=-30V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Classification Of hFE4
Rank
Range
A
100~180
N
120~270
B
180~300
Ordering Information
Device
BTP2907A3
Package
TO-92
(Pb-free)
Shipping
2000 pcs / Tape & Box
BTP2907A3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTP29 07A3 Spec. No. : C317A3-H Issued Date : 2002.06.11 Revised Date : 2005.06.29 Page No. : 1/5 Description • The BTP 2907A3 is designed for general purpose amplifier and high-speed switching, med ium power applications. • Low collect or saturation voltage • High speed sw itching. • Complementary to BTN2222A3 • Pb-free package Symbol BTP2907A3 Outline TO-92 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Vo ltage Collector-Emitter Voltage Emitter -Base Voltage Collector Current Power D issipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg BTP2907A3 EBC Limits -60 -60 -5 -600 625 150 -55~+150 Unit V V V mA mW °C °C CYStek Product Specifi cation CYStech Electronics Corp. Spec . No. : C317A3-H Issued Date : 2002.06. 11 Revised Date : 2005.06.29 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX *VCE(sat) *VCE.
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