3075 FET Datasheet

3075 Datasheet, PDF, Equivalent


Part Number

3075

Description

N-channel Enhancement Mode MOS FET

Manufacture

CXW

Total Page 6 Pages
Datasheet
Download 3075 Datasheet


3075
  N-channel Enhancement Mode MOSFET
 
 
 
3075
DESCRIPTION 
  The   uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in    PWM 
applications. 
 
 
 
GENERAL FEATURES 
RDS(ON) <  Ω @ VGS=4.5V   
RDS(ON) <  Ω @ VGS=10V 
High Power and current handing capability 
Lead free product is acquired 
Surface Mount Package 
D D DD
Application 
PWM applications 
Load switch 
Power management 
SSSG  
PIN1
 
DATASHEET
3424
PIN1
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current
TC=25
TC=100
  Pulsed Drain Current A
 
Total Power Dissipation
 
TC=25
 TC=100
Single Pulse Avalanche Energy B
Thermal Resistance Junction-to-Case C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
RθJC
TJ ,TSTG
Limit
30
±20
30
21
120
35
15
29
-55+150
                            
                         
1 /6
Unit
V
V
A
A
W
W
mJ
/ W

3075
  N-channel Enhancement Mode MOSFET
 
 
 
 
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) 
3075
DATASHEET
3424
Parameter
Symbol
Conditions
Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
IGSS
VGS(th)
0V,V
VGS= 0V, ID=250μA
VDS= 24V,VGS=0V
TJ=25
TJ=55
VGS= ±20V, VDS=0V
VDS= VGS, ID=250μA
30 V
1
10
±100
μA
nA
1. 2 1.5 2. 2 V
Static Drain-Source On-Resistance
RDS(ON)
VGS= 10V, ID=15A
VGS= 4.5V, ID=15A
4.1 5.0
mΩ
6.5 8.0
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VSD
IS
IS=1 A,VGS=0V
0.7 1.2
30
V
A
Dynamic Parameters
Input Capacitance
Output Capacitance
Ciss
Coss VDS=15V,VGS=0V,f=1MHZ
550 pF
Reverse Transfer Capacitance
Switching Parameters
Crss
60
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Reverse Recovery Chrage
Reverse Recovery Time
Qg
Qgs VGS=10V,VDS=15V,ID=
Qgd
Qrr
trr
2.2
nC
3.1
25
26
Turn-on Delay Time
Turn-on Rise Time
tD(on)
tr
Ω
ns
Turn-off Delay Time
tD(off)
Turn-off fall Time
tf
A. Pulse Test: Pulse Width300us,Duty cycle 2%.
B. Tj=25, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented
here is based on mounting on a 1 in 2 pad of 2oz copper.
 
2/6


Features   N-channel Enhancement Mode MOSFET       3075 DESCRIPTION    The   us es  advanced  trench  technology  t o  provide  excellent  RDS(ON)  and   low  gate  charge.  This  device   is  suitable  for  use  as  a  load  switch  or  in    PWM  app lications.        GENERAL FEATU RES   RDS(ON) <  Ω @ VGS=4.5 V    RDS(ON) <  Ω @ VGS=10V  High Power and current handing  capability   Lead free product i s acquired   Surface Mount Packa ge  D D DD Application   PWM ap plications   Load switch   Pow er management  SSSG   PIN1   DA TASHEET 3424 PIN1 ■ Absolute Maximum Ratings (TA=25℃unless otherwise note d) Parameter Symbol Drain-source Vol tage Gate-source Voltage Drain Curren t TC=25℃ TC=100℃   Pulsed Drain Current A   Total Power Dissipation   TC=25℃  TC=100℃ Single Pulse Av alanche Energy B Thermal Resistance Ju nction-to-Case C Junction and Storage Temperature Range VDS VGS ID IDM PD EAS RθJC TJ ,TSTG Limit 30 ±20 30 21 120 35 15 29 -55~+150                                 .
Keywords 3075, datasheet, pdf, CXW, N-channel, Enhancement, Mode, MOS, FET, 075, 75, 5, 307, 30, 3, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)