3426B FET Datasheet

3426B Datasheet, PDF, Equivalent


Part Number

3426B

Description

N-channel Enhancement Mode MOS FET

Manufacture

CXW

Total Page 5 Pages
Datasheet
Download 3426B Datasheet


3426B
  N-channel Enhancement Mode MOSFET
 
 
 
34246B DATASHEET
3424
DESCRIPTION 
  The   uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in    PWM 
applications. 
 
 
 
GENERAL FEATURES 
RDS(ON) <  Ω @ VGS=4.5V   
RDS(ON) <  Ω @ VGS=10V 
High Power and current handing capability 
Lead free product is acquired 
Surface Mount Package 
D D DD
Application 
PWM applications 
Load switch 
Power management 
SSSG  
PIN1
 
PIN1
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current
TC=25
TC=100
  Pulsed Drain Current A
 
Total Power Dissipation
 
TC=25
 TC=100
Single Pulse Avalanche Energy B
Thermal Resistance Junction-to-Case C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
RθJC
TJ ,TSTG
Limit
30
±20
30
21
100
25
10
128
7.5
-55+175
                            
                         
1 /5
Unit
V
V
A
A
W
W
mJ
/ W

3426B
  N-channel Enhancement Mode MOSFET
 
 
 
 
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) 
34246B DATASHEET
3424
Parameter
Symbol
Conditions
Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
IGSS
VGS(th)
VGS= 0V, ID=250μA
VDS=30V,VGS=0V
TJ=25
TJ=55
VGS= ±20V, VDS=0V
VDS= VGS, ID=250μA
30 V
1
μA
5
±100
nA
1.0 1.5 2.5
V
Static Drain-Source On-Resistance
RDS(ON)
VGS= 10V, ID=15A
VGS= 4.5V, ID=15A
8.0 10
mΩ
10 13
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VSD
IS
IS=15A,VGS=0V
0.85 1.2
30
V
A
Dynamic Parameters
Input Capacitance
Output Capacitance
Ciss
Coss VDS=15V,VGS=0V,f=1MHZ
1020
225
pF
Reverse Transfer Capacitance
Switching Parameters
Crss
126
Total Gate Charge
Qg
28
Gate-Source Charge
Gate-Drain Charge
Qgs VGS=10V,VDS=15V,ID=30A
Qgd
7
nC
5
Reverse Recovery Chrage
Reverse Recovery Time
Qrr
IF=15A, di/dt=100A/us
trr
25
26
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
tD(on)
tr
tD(off)
VGS=10V,VDD=20V, ID=2A,RL=1Ω
RGEN=3Ω
8
15 ns
27
Turn-off fall Time
tf
7
A. Pulse Test: Pulse Width300us,Duty cycle 2%.
B. Tj=25, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented
here is based on mounting on a 1 in 2 pad of 2oz copper.
 
2/5


Features   N-channel Enhancement Mode MOSFET       34246B DATASHEET 3424 DESCRIPTI ON    The   uses  advanced  trench   technology  to  provide  excellen t  RDS(ON)  and  low  gate  charge .  This  device  is  suitable  for   use  as  a  load  switch  or  in    PWM  applications.      GENERAL FEATURES   RDS(ON) < Ω @ VGS=4.5V    RDS(ON) <   @ VGS=10V   High Power and c urrent handing capability   Lead free product is acquired   Surf ace Mount Package  D D DD Applicat ion   PWM applications   Load switch   Power management  SSSG   PIN1   PIN1 ■ Absolute Maxim um Ratings (TA=25℃unless otherwise no ted) Parameter Symbol Drain-source V oltage Gate-source Voltage Drain Curr ent TC=25℃ TC=100℃   Pulsed Drai n Current A   Total Power Dissipation   TC=25℃  TC=100℃ Single Pulse Avalanche Energy B Thermal Resistance Junction-to-Case C Junction and Storage Temperature Range VDS VGS ID IDM PD EAS RθJC TJ ,TSTG Limit 30 ±20 30 21 100 25 10 128 7.5 -55~+175                           .
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