Passivated Rectifier. 1N4007G-K Datasheet

1N4007G-K Rectifier. Datasheet pdf. Equivalent

1N4007G-K Datasheet
Recommendation 1N4007G-K Datasheet
Part 1N4007G-K
Description Glass Passivated Rectifier
Feature 1N4007G-K; 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor 1A, 50V - 1000V Glass Passivated Rectifier FEATURES ●.
Manufacture Taiwan Semiconductor
Datasheet
Download 1N4007G-K Datasheet





Taiwan Semiconductor 1N4007G-K
4 1N4001G-K - 1N4007G-K
Taiwan Semiconductor
1A, 50V - 1000V Glass Passivated Rectifier
FEATURES
Glass passivated chip junction
High current capability, Low VF
High reliability
High surge current capability
Low power loss, high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
TV
Monitor
KEY PARAMETERS
PARAMETER
IF(AV)
VRRM
IFSM
TJ MAX
Package
VALUE
1
UNIT
A
50 - 1000
V
30 A
150 °C
DO-204AL (DO-41)
Configuration
Single Die
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94V-0 flammability rating
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Pure tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 0.33 g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
SYMBOL
UNIT
G-K
G-K
G-K
G-K
G-K
G-K
G-K
Marking code on the device
Repetitive peak reverse
voltage
Reverse voltage, total rms
value
Maximum DC blocking
voltage
VRRM
VR(RMS)
VDC
1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
V
V
V
Forward current
Surge peak forward
current, 8.3 ms single half
sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
IF(AV)
IFSM
TJ
TSTG
1
30
- 55 to +150
- 55 to +150
A
A
°C
°C
1 Version:A1612



Taiwan Semiconductor 1N4007G-K
4 1N4001G-K - 1N4007G-K
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
RӨJA
LIMIT
80
UNIT
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode (1)
Reverse current @ rated VR per diode (2)
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
CONDITIONS
IF = 1A,TJ = 25°C
TJ = 25°C
TJ = 125°C
1 MHz, VR=4.0V
SYMBOL
VF
IR
CJ
TYP
-
-
-
10
MAX
1
5
100
-
UNIT
V
µA
µA
pF
ORDERING INFORMATION
PART NO.
PACKIN
G CODE
A0
PACKING CODE
SUFFIX
1N400xG-K
(Note 1, 2)
R0
R1
G
B0
Notes:
1. "x" defines voltage from 50V (1N4001G-K) to 1000V (1N4007G-K)
2. Whole series with green compound (halogen-free)
PACKAGE
DO-41
DO-41
DO-41
DO-41
PACKING
3,000 / Ammo box
(52mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel
(Reverse)
1,000 / Bulk packing
EXAMPLE P/N
EXAMPLE P/N
1N4001G-K A0G
PART NO.
1N4001G-K
PACKING
CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2 Version:A1612



Taiwan Semiconductor 1N4007G-K
4
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
1.5
1N4001G-K - 1N4007G-K
Taiwan Semiconductor
Fig2. Typical Junction Capacitance
100
1
0.5
0
0
25 50 75 100 125
AMBIENT TEMPERATURE(oC)
150
10
f=1.0MHz
Vsig=50mVp-p
1
0.1 1 10
REVERSE VOLTAGE (V)
100
Fig3. Typical Reverse Characteristics
100
TJ=125°
10
1
TJ=75°C
0.1
TJ=25°C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig4. Typical Forward Characteristics
10
10
1
0.1
1
UF1DLW
TJ=125°C
TJ=25°C
0.01
Pulse width
0.001
0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
FORWARD VOLTAGE (V)
1.2
3 Version:A1612





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