Planar Transistor. BTP2907SL3 Datasheet

BTP2907SL3 Transistor. Datasheet pdf. Equivalent

BTP2907SL3 Datasheet
Recommendation BTP2907SL3 Datasheet
Part BTP2907SL3
Description Low PNP Epitaxial Planar Transistor
Feature BTP2907SL3; .
Manufacture CYStech
Datasheet
Download BTP2907SL3 Datasheet




CYStech BTP2907SL3
CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
BTP2907SL3
Spec. No. : C824L3
Issued Date : 2003.07.31
Revised Date :2013.11.12
Page No. : 1/7
Features
Excellent DC current gain characteristics
Low Saturation Voltage
VCE(sat)=-0.5V(max) (IC=-1A, IB=-100mA).
Pb-free lead plating and halogen-free package
Symbol
BTP2907SL3
BBase
CCollector
EEmitter
Outline
SOT-223
C
E
C
B
Ordering Information
Device
BTP2907SL3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTP2907SL3
CYStek Product Specification



CYStech BTP2907SL3
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed) (Note 1)
Power Dissipation @ TC=25
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Note : Single pulse, Pw10ms, Duty Cycle30%.
Limits
-100
-80
-6
-1
-2 (Note)
2
150
-55~+150
Spec. No. : C824L3
Issued Date : 2003.07.31
Revised Date :2013.11.12
Page No. : 2/7
Unit
V
V
V
A
W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-100
-80
-5
-
-
-
180
-
-
Typ.
-
-
-
-
-
-
-
125
10
Max.
-
-
-
-100
-100
-0.5
390
-
20
Unit
V
V
V
nA
nA
V
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-80V
VEB=-6V
IC=-1A, IB=-100mA
VCE=-2V, IC=-100mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Recommended soldering footprint
BTP2907SL3
CYStek Product Specification



CYStech BTP2907SL3
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C824L3
Issued Date : 2003.07.31
Revised Date :2013.11.12
Page No. : 3/7
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
-IB=100uA
1 2 34 5
-VCE , Collector-to-Emitter Voltage(V)
6
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
-IB=500uA
12 3 45
-VCE , Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
Current Gain vs Collector Current
1000
100
10
1
1000
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
-VCE=1V
10 100
-IC, Collector Current(mA)
1000
100
10
1
-VCE=2V
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10 100
-IC, Collector Current(mA)
1000
Current Gain vs Collector Current
-VCE=5V
1000
Saturation Voltage vs Collector Current
VCESAT@IC=10IB
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
10 100
-IC, Collector Current(mA)
100
10
1000 1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10 100
-IC, Collector Current(mA)
1000
BTP2907SL3
CYStek Product Specification





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