Planar Transistor. BTP3906N3 Datasheet

BTP3906N3 Transistor. Datasheet pdf. Equivalent


CYStech BTP3906N3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTP3906N3
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2013.09.27
Page No. : 1/7
Description
Complementary to BTN3904N3.
Pb-free lead plating and halogen-free package
Symbol
BTP3906N3
Outline
SOT-23
BBase
CCollector
EEmitter
Ordering Information
Device
BTP3906N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTP3906N3
CYStek Product Specification


BTP3906N3 Datasheet
Recommendation BTP3906N3 Datasheet
Part BTP3906N3
Description General Purpose PNP Epitaxial Planar Transistor
Feature BTP3906N3; CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTP3906N3 Spec. No. : C31.
Manufacture CYStech
Datasheet
Download BTP3906N3 Datasheet




CYStech BTP3906N3
CYStech Electronics Corp.
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2013.09.27
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
Tj
Tstg
Limits
-40
-40
-5
-200
225 (Note)
560
150
-55~+150
Unit
V
V
V
mA
mW
mW
°C
°C
Thermal Characteristics
Symbol
Rth,j-c
Rth, j-a
Parameter
thermal resistance from junction to case
thermal resistance from junction to ambient
Note : Free air condition
Conditions
(Note )
Value
223
556
Unit
/W
/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE
*hFE
*hFE
*hFE
*hFE
fT
Cob
Min.
-40
-40
-5
-
-
-
-
-0.65
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-0.05
-0.12
-0.76
-0.88
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=-10μA
IC=-1mA
IE=-10μA
VCE=-30V, VBE=3V
VEB=-4V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-100μA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTP3906N3
CYStek Product Specification



CYStech BTP3906N3
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2013.09.27
Page No. : 3/7
1000
Current Gain vs Collector Current
HFE@VCE=1V
1000
Saturation Voltage vs Collector Current
VCE(SAT)@IC=10IB
100 100
10
0.1
1 10 100
Collector Current--- IC(mA)
1000
Saturation Voltage vs Collector Current
10000
VBE(SAT)@IC=10IB
1000
10
0.1
1 10 100
Collector Current IC-(mA)
1000
Cutoff Frequency vs Collector Current
1000
VCE=20V
100
0.1
1 10 100
Collector Current---IC(mA)
1000
250
200
150
100
50
0
0
BTP3906N3
Power Derating Curve
50 100 150
Ambient Temperature---TA(℃)
200
100
1
10
Collector Current---IC(mA)
100
CYStek Product Specification







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