BTP3906N3 Transistor Datasheet

BTP3906N3 Datasheet, PDF, Equivalent


Part Number

BTP3906N3

Description

General Purpose PNP Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTP3906N3 Datasheet


BTP3906N3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTP3906N3
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2013.09.27
Page No. : 1/7
Description
Complementary to BTN3904N3.
Pb-free lead plating and halogen-free package
Symbol
BTP3906N3
Outline
SOT-23
BBase
CCollector
EEmitter
Ordering Information
Device
BTP3906N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTP3906N3
CYStek Product Specification

BTP3906N3
CYStech Electronics Corp.
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2013.09.27
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
Tj
Tstg
Limits
-40
-40
-5
-200
225 (Note)
560
150
-55~+150
Unit
V
V
V
mA
mW
mW
°C
°C
Thermal Characteristics
Symbol
Rth,j-c
Rth, j-a
Parameter
thermal resistance from junction to case
thermal resistance from junction to ambient
Note : Free air condition
Conditions
(Note )
Value
223
556
Unit
/W
/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE
*hFE
*hFE
*hFE
*hFE
fT
Cob
Min.
-40
-40
-5
-
-
-
-
-0.65
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-0.05
-0.12
-0.76
-0.88
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=-10μA
IC=-1mA
IE=-10μA
VCE=-30V, VBE=3V
VEB=-4V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-100μA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTP3906N3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTP39 06N3 Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2013.09.27 Page No. : 1/7 Description • Complem entary to BTN3904N3. • Pb-free lead p lating and halogen-free package Symbol BTP3906N3 Outline SOT-23 B:Base C Collector E:Emitter Ordering Inform ation Device BTP3906N3-0-T1-G Package SOT-23 (Pb-free lead plating and haloge n-free package) Shipping 3000 pcs / ta pe & reel Environment friendly grade : S for RoHS compliant products, G for R oHS compliant and green compound produc ts Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTP3906 N3 CYStek Product Specification CYSte ch Electronics Corp. Spec. No. : C318N 3-H Issued Date : 2002.06.11 Revised Da te : 2013.09.27 Page No. : 2/7 Absolut e Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitte r Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C).
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