NPN Transistor. BU941ZNF3 Datasheet

BU941ZNF3 Transistor. Datasheet pdf. Equivalent

Part BU941ZNF3
Description NPN Transistor
Feature CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZNF3 Spec. No. : C660F3 Issued Date .
Manufacture CYStech
Datasheet
Download BU941ZNF3 Datasheet

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU BU941ZNF3 Datasheet
Recommendation Recommendation Datasheet BU941ZNF3 Datasheet




BU941ZNF3
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BU941ZNF3
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2015.09.04
Page No. : 1/6
Features
High BVCEO
Low VCE(SAT)
High current capability
Built-in clamping zener
Pb-free lead plating package
Applications
High ruggedness electronic ignitions
Equivalent Circuit
BU941ZNF3
B
C
BBase
CCollector
EEmitter
E
Outline
TO-263
BCE
Ordering Information
Device
BU941ZNF3-0-T7-X
Package
Shipping
TO-263
(Pb-free lead plating package)
800pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T7: 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BU941ZNF3
CYStek Product Specification



BU941ZNF3
CYStech Electronics Corp.
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2015.09.04
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
IB(DC)
IB(Pulse)
Pd(TA=25)
Pd(TC=25)
RθJA
RθJC
Tj
Tstg
Limits
350
350
5
15
30 *1
1
5 *1
2
150
75
1
175
-65~+175
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat) 1
*VBE(sat) 2
*VFEC
*hFE 1
*hFE 2
*hFE 3
Min.
350
350
-
-
-
-
-
-
-
-
-
1000
600
400
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
450
450
100
100
10
1.6
1.5
1.6
2.2
2.5
1.6
3200
-
-
Unit Test Conditions
V IC=1mA, IE=0
V IC=100mA, IB=0
μA VCE=350V, IE=0
μA VCB=350V, IE=0
mA VEB=5V, IC=0
V IC=6A, IB=10mA
V IC=8A, IB=100mA
V IC=10A, IB=250mA
V IC=8A, IB=100mA
V IC=10A, IB=250mA
V IC=10A
- VCE=10V, IC=5A
- VCE=10V, IC=10A
- VCE=10V, IC=13A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
BU941ZNF3
CYStek Product Specification





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