switching diode. DAN212N3 Datasheet

DAN212N3 diode. Datasheet pdf. Equivalent


Part DAN212N3
Description High-speed switching diode
Feature CYStech Electronics Corp. High –speed switching diode DAN212N3 Spec. No. : C303N3R Issued Date : 20.
Manufacture CYStech
Datasheet
Download DAN212N3 Datasheet


CYStech Electronics Corp. High –speed switching diode DAN212 DAN212N3 Datasheet
Recommendation Recommendation Datasheet DAN212N3 Datasheet




DAN212N3
CYStech Electronics Corp.
High –speed switching diode
DAN212N3
Spec. No. : C303N3R
Issued Date : 2003.04.12
Revised Date : 2010.10.21
Page No. : 1/6
Description
The DAN212N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in
the small SOT-23 plastic SMD package.
Equivalent Circuit
Outline
DAN212N3
21
3
1Anode
2Not Connected
3Cathode
SOT-23
Cathode
Anode
NC
Features
Small plastic SMD package
High switching speed: max. 4ns
Continuous reverse voltage: max. 100V
Repetitive peak reverse voltage: max. 110V
Repetitive peak forward current: max. 500mA.
Applications
High-speed switching in thick and thin-film circuits.
Ordering Information
Device
DAN212N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
A6
DAN212N3
CYStek Product Specification



DAN212N3
CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125prior to surge t=1μs
t=1ms
t=1s
Total power dissipation(Note 1)
Junction Temperature
Storage Temperature
Note 1: Device mounted on an FR-4 PCB.
Symbol
VRRM
VR
IF
IFRM
IFSM
Ptot
Tj
Tstg
Min
-
-
-
-
-
-
-
-65
Spec. No. : C303N3R
Issued Date : 2003.04.12
Revised Date : 2010.10.21
Page No. : 2/6
Max
110
100
200
500
4
1
0.5
250
150
+150
Unit
V
V
mA
mA
A
A
A
mW
°C
°C
Electrical Characteristics @ Tj=25unless otherwise specified
Parameters
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
Symbol
Conditions
Min Typ. Max Unit
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
VR=25V
IR
VR=100V
VR=25V,Tj=150
VR=100V,Tj=150
715 mV
-
-
855 mV
1V
1.25 V
30 nA
-
-
1 μA
30 μA
50 μA
Cd VR=0V, f=1MHz
- - 1.5 pF
when switched from IF=10mA to
trr IR=10mA,RL=100, measured - - 4 ns
at IR=1mA
Vfr
when switched from IF=10mA
tr=20ns
-
- 1.75 V
Thermal Characteristics
Symbol
Rth,j-tp
Rth, j-a
Parameter
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note 1: Device mounted on an FR-4 PCB.
Conditions
Note 1
Value
360
500
Unit
/W
/W
DAN212N3
CYStek Product Specification





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