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SE2305GD

Part Number	SE2305GD
Manufacturer	WILLAS
Description	P-Channel High Density Trench MOSFET
Published	Feb 25, 2020
Detailed Description	P-Channel High Density Trench MOSFET SE2305GD PRIMARY CHARACTERISTICS VDSS ID RDS(on)Max -20V -3.5A -1.2A 50mΩ@V...
Datasheet	SE2305GD PDF File

Overview

P-Channel High Density Trench MOSFET SE2305GD PRIMARY CHARACTERISTICS VDSS ID RDS(on)Max -20V -3.
5A -1.
2A 50mΩ@VGS=4.
5V 65mΩ@VGS=2.
5V SOT-23 Marking :A5S- HB A5 S- HB PACKAGE D S G D FEATURES  High power and current handing capability  Lead free product is acquired  Surface mount package  Moisture Sensitivity Level 1 G S MECHANICAL DATA  Case：Molded plastic,SOT-23  Polarity：Shown above  Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026  Epoxy : UL94-V0 rated flame retardant DESCRIPTION The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
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SE2305GD P-Channel High Density Trench MOSFET - WILLAS

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