VDS 1200 V
C3M0016120D
ID @ 25˚C
115 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 16 mΩ
N-Channel Enhancement Mode
Features
Package
3rd generation SiC MOSFET technology
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low revers...
