Power MOSFET. IRFI4229PbF Datasheet

IRFI4229PbF MOSFET. Datasheet pdf. Equivalent


Infineon IRFI4229PbF
 
Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
Short Fall & Rise Times for Fast Switching
150°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
IRFI4229PbF
HEXFET® Power MOSFET
Key Parameters
VDS max
250 V
VDS (Avalanche) typ.
300 V
RDS(ON) typ. @ 10V 38 m
IRP max @ TC= 100°C
32
A
TJ max
150 °C
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in
Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon
area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for PDP driving applications
Base Part Number
IRFI4229PbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI4229PbF
Absolute Maximum Ratings
Symbol
Parameter
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Repetitive Peak Current
PD @TC = 25°C
Maximum Power Dissipation
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
RJC Junction-to-Case
RJA Junction-to-Ambient
Parameter
Max.
± 30
19
12
72
32
46
18
0.37
-40 to + 150
300
10 lbf•in (1.1N•m)
Units
V
A  
W
W/°C
 
°C 
 
 
Typ.
–––
–––
Max.
2.73
65
Units
°C/W
1 2017-04-27


IRFI4229PbF Datasheet
Recommendation IRFI4229PbF Datasheet
Part IRFI4229PbF
Description Power MOSFET
Feature IRFI4229PbF;   Features  Advanced Process Technology  Key Parameters Optimized for PDP Sustain, Energy Recovery.
Manufacture Infineon
Datasheet
Download IRFI4229PbF Datasheet




Infineon IRFI4229PbF
  IRFI4229PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
IDSS Drain-to-Source Leakage Current
IGSS  
gfs
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Trans conductance
250
–––
–––
3.0
–––
–––
–––
–––
–––
26
–––
340
38
–––
-12
–––
–––
–––
–––
–––
Qg Total Gate Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
tst Shoot Through Blocking Time
––– 73
––– 24
––– 18
––– 17
––– 32
––– 13
100 –––
EPULSE
Energy per Pulse
––– 770
––– 1380
Ciss
Coss
Crss
Coss eff.
LD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
––– 4480
––– 400
––– 100
––– 270
––– 4.5
LS Internal Source Inductance
Avalanche Characteristics 
Parameter
EAS Single Pulse Avalanche Energy 
EAR Repetitive Avalanche Energy
VDS(Avalanche)
Repetitive Avalanche Voltage
IAS Avalanche Current
––– 7.5
Max.
–––
–––
46
5.0
–––
20
200
100
-100
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 11A
V
mV/°C
VDS
=
VGS,
ID
=
250µA
µA  
VDS = 250V, VGS = 0V
VDS = 250V,VGS = 0V,TJ =150°C
nA  
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 11A
nC
 
ID = 11A,VDS = 125V
VGS = 10V
VDD = 125V, VGS = 10V
ns ID = 11A
RG= 2.4
See Fig. 22
ns VDD = 200V,VGS = 15V,RG= 5.1
L = 220nH, C = 0.3µF, VGS = 15V
µJ
VDD = 200V, RG= 5.1TJ = 25°C
L = 220nH, C = 0.3µF, VGS = 15V
VDD = 200V, RG= 5.1TJ = 100°C
VGS = 0V
pF
 
VDS
ƒ=
= 25V
1.0MHz
VGS = 0V, VDS = 0V to 200V
Between lead,
nH  6frmommp(0ac.2k5aigne.)
and center of die contact
Typ.
–––
–––
300
–––
Max.
110
4.6
–––
11
Units
mJ
V
A
Diode Characteristics
Parameter
IS
@ TC = 25°C
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
120
540
Max. Units
Conditions
18
72
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.3 V TJ = 25°C,IS = 11A,VGS = 0V 
180 ns TJ = 25°C ,IF = 11A, VDD = 50V
810 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 1.9mH, RG = 25, IAS = 11A.
Pulse width 400µs; duty cycle 2%.
Rθ is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1μsec.
2 2017-04-27



Infineon IRFI4229PbF
 
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.01
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 1. Typical Output Characteristics
100
VDS = 25V
60µs PULSE WIDTH
10
1 TJ = 150°C
TJ = 25°C
0.1
3
456
VGS, Gate-to-Source Voltage (V)
7
Fig. 3. Typical Transfer Characteristics
1400
1200
1000
L = 220nH
C = 0.3µF
100°C
25°C
800
600
400
200
140 150 160 170 180 190 200 210
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
3
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
IRFI4229PbF
5.0V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 2. Typical Output Characteristics
3.0
ID = 11A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4. Normalized On-Resistance vs. Temperature
1400
1200
1000
L = 220nH
C = variable
100°C
25°C
800
600
400
200
0
100 110 120 130 140 150 160 170
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
2017-04-27





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