N-CHANNEL MOSFET. SVF10N80K Datasheet

SVF10N80K MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVF10N80K
SVF10N80F/K_Datasheet
10A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N80F/K is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM high-voltage planar VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
10A,800V,RDS(on)(typ.)=0.92@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF10N80F
SVF10N80K
Package
TO-220F-3L
TO-262-3L
Marking
SVF10N80F
SVF10N80K
Hazardous
Substance Control
Pb free
Halogen free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.4
Page 1 of 8


SVF10N80K Datasheet
Recommendation SVF10N80K Datasheet
Part SVF10N80K
Description 800V N-CHANNEL MOSFET
Feature SVF10N80K; SVF10N80F/K_Datasheet 10A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N80F/K is an N-channel enh.
Manufacture Silan Microelectronics
Datasheet
Download SVF10N80K Datasheet




Silan Microelectronics SVF10N80K
SVF10N80F/K_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25C
TC=100C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
SVF10N80F
SVF10N80K
800
±30
10.0
6.32
40
62 230
0.50 1.84
938
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
SVF10N80F
2.02
62.5
Ratings
SVF10N80K
0.54
62.5
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=800V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=5.0A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V, VGS=0V,
f=1.0MHz
VDD=400V, RG=25Ω,
ID=10.0A,
(Note2,3)
VDS=640V, ID=10.0A,
VGS=10V
(Note 2,3)
Min.
800
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.92
1626.0
150.8
6.5
26.88
40.44
89.2
42.88
33.34
8.57
12.63
Max.
--
1.0
±100
4.0
1.15
--
--
--
--
--
--
--
--
--
--
Unit
V
V
A
A
W
W/C
mJ
C
C
Unit
C/W
C/W
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.4
Page 2 of 8



Silan Microelectronics SVF10N80K
SVF10N80F/K_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N Junction
ISM Diode in the MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD IS=10.0A,VGS=0V
Trr IS=10.0A,VGS=0V,
Qrr dIF/dt=100A/µs (Note 2)
Notes:
1. L=30mH, IAS=7.50A, VDD=100V, RG=25, starting TBJB=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
TYPICAL CHARACTERISTICS
Typ.
--
--
--
610.8
5.6
Max.
10.0
40.0
1.4
--
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.4
Page 3 of 8







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