N-CHANNEL MOSFET. SVFP4N65CAD Datasheet

SVFP4N65CAD MOSFET. Datasheet pdf. Equivalent

SVFP4N65CAD Datasheet
Recommendation SVFP4N65CAD Datasheet
Part SVFP4N65CAD
Description 650V N-CHANNEL MOSFET
Feature SVFP4N65CAD; Silan Microelectronics SVFP4N65CAD_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP4N.
Manufacture Silan Microelectronics
Datasheet
Download SVFP4N65CAD Datasheet




Silan Microelectronics SVFP4N65CAD
Silan
Microelectronics
SVFP4N65CAD_Datasheet
4A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVFP4N65CAD is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM high-voltage planar VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
4A, 650V, RDS(on)(typ.)=2.3@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
2
1
3
1.Gate 2.Drain 3.Source
1
3
TO-252-2L
NOMENCLATURE
S V F PX N E X X C A X
Silan VDMOS Code of
F-Cell process
Process Version,P
denotesPASSIVATION
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,10 denotes
10A,08 denotes 0.8A
N denotes N Channel
Package information.
Example: FJ:TO-220FJ;FQ:TO-220FQ
REV.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
ORDERING INFORMATION
Part No.
SVFP4N65CAD
Package
TO-252-2L
Marking
P4N65CAD
Hazardous
Substance Control
Halogen free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 1 of 8



Silan Microelectronics SVFP4N65CAD
Silan
Microelectronics
SVFP4N65CAD_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted)
Characteristics
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25C
TC=100C
Drain Current Pulsed
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
650
±30
4.0
2.5
16
77
0.62
215
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
1.62
62.0
ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
Min.
650
--
--
2.0
RDS(on) VGS=10V, ID=2A
--
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V, VGS=0V,
f=1.0MHz
VDD=325V, VGS=10V,
RG=25Ω, ID=4A
(Note2,3)
VDD=520V, VGS=10V, ID=4A
(Note 2,3)
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
2.3
430
55
4.1
9.9
26
28
26
13
2.7
6.3
Unit
V
V
A
A
W
W/C
mJ
C
C
Unit
C/W
C/W
Max.
--
1.0
±100
4.0
2.7
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 2 of 8



Silan Microelectronics SVFP4N65CAD
Silan
Microelectronics
SVFP4N65CAD_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
IS Integral Reverse P-N Junction
ISM Diode in the MOSFET
VSD IS=4.0A,VGS=0V
Trr IS=4.0A,VGS=0V,
Qrr dIF/dt=100A/µs
(Note 2)
1. L=30mH, IAS=3.6A, VDD=100V, RG=25, starting TBJB=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
450
1.9
Max.
4.0
16
1.4
--
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 3 of 8







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