N-CHANNEL MOSFET. SVF3878AP7 Datasheet

SVF3878AP7 MOSFET. Datasheet pdf. Equivalent

SVF3878AP7 Datasheet
Recommendation SVF3878AP7 Datasheet
Part SVF3878AP7
Description 900V N-CHANNEL MOSFET
Feature SVF3878AP7; Silan Microelectronics SVF3878AP7_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878AP7 is a.
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Silan Microelectronics SVF3878AP7
Silan
Microelectronics
SVF3878AP7_Datasheet
9A, 900V N-CHANNEL MOSFET
DESCRIPTION
SVF3878AP7 is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary F-CellTM
high-voltage planar VDMOS technology. The improved process and cell
structure have been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
9A, 900V, RDS(on) (typ.)=1. 0@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
2. Drain
1. Gate
3. Source
12 3
TO-247-3L
ORDERING INFORMATION
Part No.
SVF3878P7
Package
TO-247-3L
Marking
3878A
Hazardous
Substance Control
Pb free
Packing
Tube
ABSOLUTE MAXIMUM RATINGS (unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
900
±30
9.0
5.7
27.0
150
1.2
966
-55+150
-55+150
Unit
V
V
A
A
W
W/C
mJ
C
C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 1 of 7



Silan Microelectronics SVF3878AP7
Silan
Microelectronics
SVF3878AP7_Datasheet
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
0.83
50
ELECTRICAL CHARACTERISTICS (unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=900V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=4.5A
VDS=25V, VGS=0V, f=1.0MHz
VDD=400V, RG=25, ID=4.0A
(Note2,3)
VDD=450V, VGS=10V,
ID=9.0A
(Note 2,3)
Min.
900
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
1.0
2009
208
47
22
28
84
30
68
10
39
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=9.0A,VGS=0V
Reverse Recovery Time
Trr IS=9.0A,VGS=0V,
Reverse Recovery Charge
Notes:
Qrr dIF/dt=100A/µS (Note2)
1.L=30mH, IAS=7.70A, VDD=100V, RG=25, starting TJ=25C;
2.Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3.Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
715
6.5
Max.
--
100
±10.0
3.0
1.28
--
--
--
--
--
--
--
--
--
--
Max.
9.0
27.0
1.4
--
--
Unit
C/W
C/W
Unit
V
µA
µA
V
pF
ns
nC
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 2 of 7



Silan Microelectronics SVF3878AP7
Silan
Microelectronics
TYPICAL CHARACTERISTICS
100
10
1
Figure 1. On-Region Characteristics
Variable
VGS=4.5V
VGS=5V
VGS=5.5V
VGS=6V
VGS=7V
VGS=8V
VGS=10V
VGS=15V
Notes:
1.250µS pulse test
2.TC=25°C
0.1
0.1 1 10 100
Drain-Source Voltage, VDS:(V)
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
1.2
VGS=10V
1.1 VGS=20V
1.0
0.9
0.8
Note: TJ=25°C
0.7
0 2 4 6 8 10
Drain Current, ID:(A)
5000
4500
4000
Figure 5. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
3500
3000
2500
2000
1500
1000
Ciss
Coss
Crss
Notes:
1. VGS=0V
2. f=1MHz
500
0
0.1 1 10 100
Drain-Source Voltage, VDS:(V)
SVF3878AP7_Datasheet
Figure 2. Transfer Characteristics
100
-55°C
25°C
150°C
10
1
Notes:
1.250µS pulse test
2.VDS=50V
0.1
0 1 2 3 4 5 6 7 8 9 10
Gate-Source Voltage, VGS:(V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100
Notes:
1.250µS pulse test
2.VGS=0V
10
-55°C
25°C
150°C
1
0.1
0.1
0.3 0.5 0.7 0.9 1.1
Source-Drain Voltage, VSD:(V)
1.3
Figure 6. Gate Charge Characteristics
12
VDS=720V
10 VDS=450V
VDS=180V
8
6
4
2
Note: ID=9.0A
0
0 10 20 30 40 50 60 70 80
Total Gate Charge, Qg:(nC)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 3 of 7







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