N-CHANNEL MOSFET. SVF10N70F Datasheet

SVF10N70F MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVF10N70F
Silan
Microelectronics
SVF10N70F/FJ_Datasheet
10A, 700V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N70F/FJ is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary F-CellTM
high-voltage planar VDMOS technology. The improved process and cell
structure have been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
10A,700V,RDS(on)(typ.)=0.95@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
2
1
3
1.Gate 2.Drain 3.Source
123
TO-220F-3L
123
TO-220FJ-3L
SVFXNEXXX
Silan VDMOS Code
of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel
Package information.
Example: F:TO-220F
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
ORDERING INFORMATION
Part No.
SVF10N70F
SVF10N70FJ
Package
TO-220F-3L
TO-220FJ-3L
Marking
SVF10N70F
SVF10N70FJ
Hazardous
Substance Control
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 1 of 7


SVF10N70F Datasheet
Recommendation SVF10N70F Datasheet
Part SVF10N70F
Description 700V N-CHANNEL MOSFET
Feature SVF10N70F; Silan Microelectronics SVF10N70F/FJ_Datasheet 10A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10.
Manufacture Silan Microelectronics
Datasheet
Download SVF10N70F Datasheet




Silan Microelectronics SVF10N70F
Silan
Microelectronics
SVF10N70F/FJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25°C
TC = 100°C
Drain Current Pulsed
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Reverse Diode dv/dt (Note 2)
MOSFET dv/dt Ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
Ratings
700
±30
10
5.5
40
50
0.4
608
4.5
50
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
2.5
62.5
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State Resistance
Input Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Test conditions
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Rg
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGS=0V, ID=250µA
VDS=700V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=5.0A
f=1.0MHz
VDS=25V,VGS=0V,
f=1.0MHz
VDD=350V, ID=10A,
RG=25
(Note 4,5)
VDS=560V,ID=10A,
VGS=10V
(Note 4,5)
Min.
700
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.95
16
1525
129
3.5
40
74
52
35
28
13
9.5
Max.
--
1.0
±100
5.0
1.2
--
--
--
--
--
--
--
--
--
--
--
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
Unit
C/W
C/W
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 2 of 7



Silan Microelectronics SVF10N70F
Silan
Microelectronics
SVF10N70F/FJ_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse p-n Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=10A,VGS=0V
Reverse Recovery Time
Trr IS=10A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µS
(Note 4)
Notes:
1.
2.
3.
4.
5.
L=30Mh, IAS=5.82A, VDD=100V, RG=25, starting temperature TJ=25C;
VDS=0~400V, ISD<=10A, TJ=25C;
VDS=0~480V;
Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
Essentially independent of operating temperature.
TYPICAL CHARACTERISTICS
Min.
--
--
--
--
--
Typ.
--
--
--
571
4.7
Max.
10
40
1.3
--
--
Unit
A
V
ns
µC
100
10
1
Figure 1. On-Region Characteristics
Variable
VGS=4.5V
VGS=5V
VGS=5.5V
VGS=6V
VGS=7V
VGS=8V
VGS=10V
VGS=15V
Notes:
1.250µS pulse test
2.TC=25°C
0.1
0.1 1 10 100
Drain-Source Voltage VDS(V)
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
1.02
1.00
0.98
0.96
VGS=10V
VGS=20V
0.94
0.92
0.90
0.88
0.86
0.84
Note: TJ=25°C
0.82
0 2 4 6 8 10
Drain Current ID(A)
Figure 2. Transfer Characteristics
100
-55°C
25°C
150°C
10
1
Notes:
1.250µS pulse test
2.VDS=50V
0.1
0 1 2 3 4 5 6 7 8 9 10
Gate-Source VoltageVGS(V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
10
-55°C
25°C
150°C
1
0.1
0.2
Notes:
1.250µS pulse test
2.VGS=0V
0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain VoltageVSD(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 3 of 7





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