N-CHANNEL MOSFET. SVT13N06DTR Datasheet

SVT13N06DTR MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVT13N06DTR
SVT13N06SA(D)_Datasheet
13A, 60V N-CHANNEL MOSFET
DESCRIPTION
The SVT13N06SA(D) is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan's LVMOS
technology. The improved process and cell structure have been
especially tailored to minimize on-state resistance, provide superior
switching performance.
This device is widely used in UPS, DC-DC converters, synchronous
rectifier and switch.
FEATURES
13A60VRDS(on)(typ.)=9m@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVT13N06SA
SVT13N06SATR
SVT13N06DTR
Package
SOP-8-225-1.27
SOP-8-225-1.27
TO-252-2L
Marking
13N06SA
13N06SA
13N06D
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Packing
Tube
Tape & Reel
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed(Note 1)
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 2)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
SVT13N06SA
SVT13N06D
60
±20
13 66
8.2 42
52 264
4.6 97
0.04
0.78
405
-55+150
-55+150
Unit
V
V
A
A
W
W/C
mJ
C
C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.5
Page 1 of 7


SVT13N06DTR Datasheet
Recommendation SVT13N06DTR Datasheet
Part SVT13N06DTR
Description 60V N-CHANNEL MOSFET
Feature SVT13N06DTR; SVT13N06SA(D)_Datasheet 13A, 60V N-CHANNEL MOSFET DESCRIPTION The SVT13N06SA(D) is an N-channel en.
Manufacture Silan Microelectronics
Datasheet
Download SVT13N06DTR Datasheet




Silan Microelectronics SVT13N06DTR
SVT13N06SA(D)_Datasheet
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case(Note 3)
Thermal Resistance, Junction-to-Ambient(Note 3)
Symbol
RθJC
RθJA
Ratings
27 1.29
85 62
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=60V, VGS=0V
VGS=±20V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=13A
VGS=4.5V, ID=10A
f=1MHz,VGS=0V,
VDS=25V
VDD=30V,VGS=10V,
RG=24Ω,ID=13A
(Note 4,5)
VDD=48V,ID=13A,VGS=10V
(Note 4,5)
Min.
60
--
--
1.1
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
9
10.8
3071
221
177
18
80
277
143
69
11
18
Max.
--
1.0
±100
2.4
11
13.5
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
m
pF
ns
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
IS
ISM
VSD
Trr
Qrr
Test conditions
Integral Reverse P-N Junction
Diode in the MOSFET
IS=13A,VGS=0V
IS=13A,VGS=0V,
dIF/dt=100A/µs
Min.
--
--
--
--
--
Typ.
--
--
--
23
0.02
Notes:
1.Drain current is limited by junction temperature;
2.L=10mH, IAS=9.0A, VDD=50V, RG=20,starting TJ=25C;
3.The value of Thermal resistance is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
4.Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5.Essentially independent of operating temperature.
Max.
13
52
1.4
--
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.5
Page 2 of 7



Silan Microelectronics SVT13N06DTR
SVT13N06SA(D)_Datasheet
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics
50
VGS=3.0V
VGS=7.0V
VGS=10.0V
40
30
20
10
0
0
Notes
1.250µS Pulse test
2.Tc=25°C
123456
Drain-source Voltage - VDS (V)
20.00
15.00
Figure 3. On-resistance vs. Drain
Current
VGS=4.5V
VGS=10.0V
10.00
5.00
0.00
0
Note:
1.Tj=25
5 10 15
Drain Current - ID (A)
Figure 5. Capacitance Characteristics
5000
4500
4000
3500
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Ciss
3000
2500
2000
1500 Crss
1000
500
Coss
Notes:
1. VGS=0V
2. f=1MHz
0
0 1 10 100
Drain-Source Voltage - VDS(V)
Figure 2. Transfer Characteristics
50
-55°C
25°C
40 150°C
30
20
Notes:
1.VDS=5V
10 2.250µS pulse test
0
0123456
Gate-source Voltage - VGS (V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100
Notes:
1. VGS=0V
2. 250µS pulse test
10
1.0
-55°C
25°C
150°C
0.1
0.2 0.4 0.6 0.8 1 1.2
Source-Drain Voltage - VSD (V)
1.4
Figure 6. Gate Charge
12
VDS=12V
VDS=30V
10 VDS=48V
8
6
4
2
Note: ID=13A
0
0 20 40 60 80
Gate Charge - QG (nC)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.5
Page 3 of 7







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