POWER TRANSISTOR. SVSP14N60TD2 Datasheet

SVSP14N60TD2 TRANSISTOR. Datasheet pdf. Equivalent


Silan Microelectronics SVSP14N60TD2
SVSP14N60F(FJD)(T)D2_Datasheet
14A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVSP14N60F(FJD)(T)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DPMOS technology.
It achieves low conduction loss and switching losses. It leads the
design engineers to their power converters with high efficiency, high
power density, and superior thermal behavior. Furthermore, it’s
universal applicable, i.e., suitable for hard and soft switching
topologies.
FEATURES
14A,600V, RDS(on)(typ.)=0.25@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVSP14N60TD2
SVSP14N60FJDD2
SVSP14N60FD2
Package
TO-220-3L
TO-220FJD-3L
TO-220F-3L
Marking
P14N60TD2
P14N60FJD
P14N60FD2
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Packing
Tube
Tube
Tube
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note1)
Reverse diode dv/dt (Note 2)
MOSFET dv/dt ruggedness(Note 3)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
Ratings
SVSP14N60TD2
SVSP14N60F/FJDD2
600
±30
14
8.8
56
120 38
0.96 0.3
580
15
50
-55+150
-55+150
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 1 of 8


SVSP14N60TD2 Datasheet
Recommendation SVSP14N60TD2 Datasheet
Part SVSP14N60TD2
Description 600V DP MOS POWER TRANSISTOR
Feature SVSP14N60TD2; SVSP14N60F(FJD)(T)D2_Datasheet 14A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVSP14N60F(FJD)(T)D2 i.
Manufacture Silan Microelectronics
Datasheet
Download SVSP14N60TD2 Datasheet




Silan Microelectronics SVSP14N60TD2
SVSP14N60F(FJD)(T)D2_Datasheet
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
SVSP14N60TD2
1.04
62.5
Value
SVSP14N60F/FJDD2
3.29
62.5
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V,
Tj=25C
ID=7.0A
Tj=125C
f=1MHz,VGS=0V,
VDS=100V
VDD=300V, VGS=10V,
RG=24Ω, ID=14A
(Note 4,5)
VDD=480V, VGS=10V,
ID=14A
(Note 4,5)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.25
0.51
805
48
3.2
14
52
117
43
26
6.0
13
Max.
--
1.0
±100
4.0
0.28
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=14A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr VDD=50V, IF=14A ,
Qrr dIF/dt=100A/µs
Notes:
1. L=79mH,IAS=3.5A,VDD=100V, RG=25, starting temperature TJ=25C;
2. VDS=0~400V,ISD<=14A, TJ=25C;
3. VDS=0~480V;
4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
378
4.6
Max.
11
56
1.4
--
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 2 of 8



Silan Microelectronics SVSP14N60TD2
TYPICAL CHARACTERISTICS
SVSP14N60F(FJD)(T)D2_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 3 of 8







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