N-CHANNEL MOSFET. SVF14N60T Datasheet

SVF14N60T MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVF14N60T
SVF14N60T_Datasheet
14A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF14N60T is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure
VDMOS technology. The improved process and cell structure have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
14A,600V,RDS(on)(typ)=0.54@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF14N60T
Package
TO-220-3L
Marking
SVF14N60T
Hazardous
Substance Control
Pb free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 7


SVF14N60T Datasheet
Recommendation SVF14N60T Datasheet
Part SVF14N60T
Description 600V N-CHANNEL MOSFET
Feature SVF14N60T; SVF14N60T_Datasheet 14A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF14N60T is an N-channel enhance.
Manufacture Silan Microelectronics
Datasheet
Download SVF14N60T Datasheet




Silan Microelectronics SVF14N60T
SVF14N60T_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
600
±30
14
8.9
56
176
1.41
850
-55+150
-55+150
Unit
V
V
A
A
W
W/C
mJ
C
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
0.71
62.5
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V,ID=250µA
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VGS= VDS,ID=250µA
VGS=10V,ID=7.0A
VDS=25V,VGS=0V
f=1.0MHz
VDD=300V,ID=14A
RG=25
(Note 2, 3)
VDS=480V,ID=14A
VGS=10V
(Note2, 3)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
0.54 0.64
1540
175
6.0
25.8
45.0
80.8
41.6
30.8
8.74
11.4
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 2 of 7



Silan Microelectronics SVF14N60T
SVF14N60T_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
IS Integral Reverse p-n Junction
ISM Diode in the MOSFET
VSD IS=14A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr IS=14A,VGS=0V,
Qrr dIF/dt=100A/µS (Note 2)
Notes:
1. L=30mH, IAS=7.0A, VDD=100V, RG=25, starting TJ=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
590
6.3
Max.
14
56
1.3
--
--
Unit
A
V
ns
µC
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 3 of 7





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