N-CHANNEL MOSFET. SVF7N60DTR Datasheet

SVF7N60DTR MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVF7N60DTR
SVF7N60F/S/D_Datasheet
7A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N60F/S/D is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM high-voltage planar VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
7A, 600V, RDS(on)typ=0.96@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVF7N60F
SVF7N60S
SVF7N60STR
SVF7N60DTR
Package
TO-220F-3L
TO-263-2L
TO-263-2L
TO-252-2L
Marking
SVF7N60F
SVF7N60S
SVF7N60S
SVF7N60D
2
1
13
3 TO-252-2L
1.Gate 2.Drain 3.Source
123
TO-220F-3L
1
3
TO-263-2L
Hazardous
Substance Control
Pb free
Halogen free
Halogen free
Halogen free
Packing
Tube
Tube
Tape & Reel
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:3.2
Page 1 of 10


SVF7N60DTR Datasheet
Recommendation SVF7N60DTR Datasheet
Part SVF7N60DTR
Description 600V N-CHANNEL MOSFET
Feature SVF7N60DTR; SVF7N60F/S/D_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60F/S/D is an N-channel e.
Manufacture Silan Microelectronics
Datasheet
Download SVF7N60DTR Datasheet




Silan Microelectronics SVF7N60DTR
SVF7N60F/S/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25C
TC=100C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF7N60F
45
0.36
Ratings
SVF7N60S
600
±30
7.0
4.0
28
122
0.98
490
-55+150
-55+150
SVF7N60D
90
0.72
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
SVF7N60F
2.78
62.5
Ratings
SVF7N60S
1.02
62.5
SVF7N60D
1.39
62.0
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=3.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V, VGS=0V,
f=1.0MHZ
VDD=300V, ID=7.0A,
RG=25
(Note 2,3)
VDS=480V, ID=7.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
592
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.96
770
96
8.7
15.5
32.7
52.2
31.5
21.1
4.53
10.0
Max.
--
1.0
±100
4.0
1.2
1001
--
--
--
--
--
--
--
--
--
Unit
V
V
A
A
W
W/C
mJ
C
C
Unit
C/W
C/W
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:3.2
Page 2 of 10



Silan Microelectronics SVF7N60DTR
SVF7N60F/S/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
IS Integral Reverse P-N Junction
ISM Diode in the MOSFET
VSD IS=7.0A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr IS=7.0A,VGS=0V,
Qrr dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=5.16A, VDD=100V, RG=25, starting TBJB=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
TYPICAL CHARACTERISTICS
Typ.
--
--
--
482
2.9
Max.
7.0
28
1.4
--
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:3.2
Page 3 of 10







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