N-CHANNEL MOSFET. SVF730M Datasheet

SVF730M MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVF730M
SVF730F/T/M/MJ_Datasheet
6A, 400V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF730F/T/M/MJ is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM high-voltage planar VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
6A, 400V, RDS(on)typ=0.66@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVF730T
SVF730F
SVF730M
SVF730MJ
Package
TO-220-3L
TO-220F-3L
TO-251D-3L
TO-251J-3L
Marking
SVF730T
SVF730F
SVF730M
SVF730MJ
Hazardous
Substance Control
Pb free
Pb free
Halogen free
Halogen free
Packing
Tube
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.8
Page 1 of 10


SVF730M Datasheet
Recommendation SVF730M Datasheet
Part SVF730M
Description 400V N-CHANNEL MOSFET
Feature SVF730M; SVF730F/T/M/MJ_Datasheet 6A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF730F/T/M/MJ is an N-chann.
Manufacture Silan Microelectronics
Datasheet
Download SVF730M Datasheet




Silan Microelectronics SVF730M
SVF730F/T/M/MJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25C
TC=100C
Drain Current Pulsed
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF730M
77
0.62
Ratings
SVF730MJ SVF730F
400
±30
6
3.79
24
79 33
0.63 0.26
288
-55+150
-55+150
THERMAL CHARACTERISTICS
SVF730T
Unit
V
V
A
100
0.80
A
W
W/C
mJ
C
C
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
SVF730M
Ratings
SVF730MJ SVF730F
RθJC
RθJA
1.62
62.0
1.58
62.0
3.79
62.5
SVF730T
1.25
62.0
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.8
Page 2 of 10



Silan Microelectronics SVF730M
SVF730F/T/M/MJ_Datasheet
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
Min.
400
--
--
2.0
RDS(on) VGS=10V, ID=3A
--
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
RG
VDS=25V, VGS=0V,
f=1.0MHZ
VDD=200V, ID=6A,
RG=12
(Note
2,3)
VDS=320V, ID=6A, VGS=10V
(Note 2,3)
F=1MHz, Gate DC Bias=0, Test
signal level=20mV, open drain
592
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
0.66 0.95
486.00 631.80
79.00 102.70
3.30 6.20
10.52 13.68
26.44 34.37
23.60 30.68
23.76 30.89
11.11 14.44
3.36 4.37
4.52 5.88
5.40 7.20
Unit
V
µA
nA
V
pF
ns
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N Junction
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=6.0A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr IS=6.0A,VGS=0V,
Qrr dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=3.90A, VDD=50V, RG=25, starting TBJB=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ. Max.
-- 6
-- 24
-- 1.4
254.17 330.42
1.50 2.00
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.8
Page 3 of 10







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)