MTN4N60BJ3 Power MOSFET Datasheet

MTN4N60BJ3 Datasheet, PDF, Equivalent


Part Number

MTN4N60BJ3

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 11 Pages
Datasheet
Download MTN4N60BJ3 Datasheet


MTN4N60BJ3
CYStech Electronics Corp.
Spec. No. : C128J3
Issued Date : 2015.05.28
Revised Date : 2015.05.29
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTN4N60BJ3 BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=2A
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating package
600V
4.0A
1.7Ω
Applications
Open Framed Power Supply
Adapter
STB
Symbol
MTN4N60BJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTN4N60BJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4N60BJ3
CYStek Product Specification

MTN4N60BJ3
CYStech Electronics Corp.
Spec. No. : C128J3
Issued Date : 2015.05.28
Revised Date : 2015.05.29
Page No. : 2/11
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=4mH, VG=10V, starting TJ=+25.
3. ISD4A, dI/dt100A/μs, VDDBVDSS, starting TJ=+25.
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
dv/dt
TL
Pd
Tj, Tstg
Limits
600
±30
4*
2.4*
16*
4
34.9
5
4.5
300
50
0.4
-55~+150
Unit
V
A
mJ
V/ns
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
MTN4N60BJ3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 128J3 Issued Date : 2015.05.28 Revised Date : 2015.05.29 Page No. : 1/11 N-Ch annel Enhancement Mode Power MOSFET MTN 4N60BJ3 BVDSS ID @ VGS=10V, TC=25°C RD SON(TYP) @ VGS=10V, ID=2A Features • Low On Resistance • Simple Drive Requ irement • Low Gate Charge • Fast Sw itching Characteristic • Pb-free lead plating package 600V 4.0A 1.7Ω Appl ications • Open Framed Power Supply Adapter • STB Symbol MTN4N60BJ3 Outline TO-252(DPAK) G:Gate D:Dra in S:Source G DS Ordering Informati on Device MTN4N60BJ3-0-T3-G Package T O-252 (Pb-free lead plating and halogen -free package) Shipping 2500 pcs / Tap e & Reel Environment friendly grade : S for RoHS compliant products, G for Ro HS compliant and green compound product s Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN4N60 BJ3 CYStek Product Specification CYSt ech Electronics Corp. Spec. No. : C128J3 Issued Date : 2015.05.28 Revised Date : 2015.05.
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