MTD55N10J3 Power MOSFET Datasheet

MTD55N10J3 Datasheet, PDF, Equivalent


Part Number

MTD55N10J3

Description

N-Channel Logic Level Enhancement Mode Power MOSFET

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download MTD55N10J3 Datasheet


MTD55N10J3
CYStech Electronics Corp.
Spec. No. : C863J3
Issued Date : 2012.06.28
Revised Date : 2013.12.30
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTD55N10J3 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=18A
VGS=4.5V, ID=12A
100V
18A
53mΩ
56mΩ
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating package
Equivalent Circuit
MTD55N10J3
Outline
TO-252(DPAK)
GGate DDrain
SSource
G DS
Ordering Information
Device
MTD55N10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD55N10J3
CYStek Product Specification

MTD55N10J3
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=18A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
(Note 2)
Total Power Dissipation @TC=25
Total Power Dissipation @TA=25
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Spec. No. : C863J3
Issued Date : 2012.06.28
Revised Date : 2013.12.30
Page No. : 2/9
Limits
100
±20
18
11
40
18
16
4.6
50
1.14
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
MTD55N10J3
100
1
-
-
-
-
-
-
-
-
-
-
-
-
-
- - V VGS=0, ID=250μA
2 3 V VDS =VGS, ID=250μA
-
±100
nA VGS=±20, VDS=0
-
-
1
25
μA
VDS =80V, VGS =0
VDS =80V, VGS =0, TJ=125°C
53
56
70
75
mΩ
VGS =10V, ID=18A
VGS =4.5V, ID=12A
24 - S VDS =5V, ID=18A
16 -
2.1 - nC ID=12A, VDS=80V, VGS=10V
7.8 -
7-
5
22
-
-
ns
VDS=50V, ID=12A, VGS=10V,
RG=6Ω
10 -
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 863J3 Issued Date : 2012.06.28 Revised Date : 2013.12.30 Page No. : 1/9 N -Ch annel Logic Level Enhancement Mode Powe r MOSFET MTD55N10J3 BVDSS ID RDSON(TYP ) VGS=10V, ID=18A VGS=4.5V, ID=12A 10 0V 18A 53mΩ 56mΩ Features • Low Ga te Charge • Simple Drive Requirement • Pb-free lead plating package Equiv alent Circuit MTD55N10J3 Outline TO-2 52(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MT D55N10J3-0-T3-G Package TO-252 (Pb-fre e lead plating and halogen-free package ) Shipping 2500 pcs / Tape & Reel Env ironment friendly grade : S for RoHS co mpliant products, G for RoHS compliant and green compound products Packing spe c, T3 : 2500 pcs / tape & reel, 13” r eel Product rank, zero for no rank prod ucts Product name MTD55N10J3 CYStek P roduct Specification CYStech Electroni cs Corp. Absolute Maximum Ratings (TC= 25°C, unless otherwise noted) Paramet er Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°.
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