LM329 Precision Reference Datasheet

LM329 Datasheet, PDF, Equivalent


Part Number

LM329

Description

Precision Reference

Manufacture

etcTI

Total Page 12 Pages
Datasheet
Download LM329 Datasheet


LM329
LM329
www.ti.com
SNVS748F – MAY 2000 – REVISED APRIL 2013
LM329 Precision Reference
Check for Samples: LM329
FEATURES
1
2 0.6 mA to 15 mA Operating Current
• 0.8Ω Dynamic Impedance at Any Current
• Available With Temperature Coefficient of
0.01%/°C
• 7μV Wideband Noise
• 5% Initial Tolerance
• 0.002% Long Term Stability
• Low Cost
• Subsurface Zener
DESCRIPTION
The LM329 is a precision multi-current temperature-
compensated 6.9V zener reference with dynamic
impedance a factor of 10 to 100 less than discrete
diodes. Constructed in a single silicon chip, the
LM329 uses active circuitry to buffer the internal
zener allowing the device to operate over a 0.5 mA to
15 mA range with virtually no change in performance.
The LM329 is available with a temperature
coefficients of 0.01%/°C. This reference also has
excellent long term stability and low noise.
A new subsurface breakdown zener used in the
LM329 gives lower noise and better long-term
stability than conventional IC zeners. Further the
zener and temperature compensating transistor are
made by a planar process so they are immune to
problems that plague ordinary zeners. For example,
there is virtually no voltage shift in zener voltage due
to temperature cycling and the device is insensitive to
stress on the leads.
The LM329 can be used in place of conventional
zeners with improved performance. The low dynamic
impedance simplifies biasing and the wide operating
current allows the replacement of many zener types.
The LM329 for operation over 0°C to 70°C is
available in a TO-92 epoxy package.
Connection Diagram
Typical Application
9V TO 40V
RS
Figure 1. Bottom View
Plastic Package (TO-92)
See Package LP
LM329
6.9V
Figure 2. Simple Reference
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2000–2013, Texas Instruments Incorporated

LM329
LM329
SNVS748F – MAY 2000 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)
Reverse Breakdown Current
Forward Current
Operating Temperature Range
Storage Temperature Range
Soldering Information
LM329
TO-92 package: 10 sec.
30 mA
2 mA
0°C to +70°C
55°C to +150°C
260°C
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not guarantee specific performance limits.
Electrical Characteristics(1)
Parameter
Reverse Breakdown Voltage
Reverse Breakdown Change TA = 25°C, with
Current (2)
Reverse Dynamic Impedance(2)
RMS Noise
Long Term Stability (1000 hours)
Temperature Coefficient
Change In Reverse Breakdown Temperature
Coefficient
Reverse Breakdown Change with Current
Reverse Dynamic Impedance
Conditions
TA = 25°C, 0.6 mA IR 15 mA
0.6 mA IR 15 mA
TA = 25°C, IR = 1 mA
TA = 25°C, 10 Hz F 10 kHz
TA = 45°C ± 0.1°C,
IR = 1 mA ± 0.3%
IR = 1 mA
1 mA IR 15 mA
1 mA IR 15 mA
1 mA IR 15 mA
Min
Typ Max
Units
6.6
6.9 7.25
V
9 20
mV
0.8 2
7 100
20
Ω
μV
ppm
50 100 ppm/°C
1 ppm/°C
12 mV
1Ω
(1) These specifications apply for 0°C TA +70°C for the LM329 unless otherwise specified. The maximum junction temperature for a
LM329 is 100°C. For operating at elevated temperature. The TO-92 package, the derating is based on 180°C/W junction to ambient with
0.4leads from a PC board and 160°C/W junction to ambient with 0.125lead length to a PC board.
(2) These changes are tested on a pulsed basis with a low duty-cycle. For changes versus temperature, compute in terms of tempco.
Typical Applications
Figure 3. Low Cost 0–25V Regulator
2 Submit Documentation Feedback
Product Folder Links: LM329
Copyright © 2000–2013, Texas Instruments Incorporated


Features LM329 www.ti.com SNVS748F – MAY 2000 – REVISED APRIL 2013 LM329 Precisio n Reference Check for Samples: LM329 F EATURES 1 •2 0.6 mA to 15 mA Operatin g Current • 0.8Ω Dynamic Impedance a t Any Current • Available With Temper ature Coefficient of 0.01%/°C • 7μV Wideband Noise • 5% Initial Toleranc e • 0.002% Long Term Stability • Lo w Cost • Subsurface Zener DESCRIPTIO N The LM329 is a precision multi-curren t temperaturecompensated 6.9V zener ref erence with dynamic impedance a factor of 10 to 100 less than discrete diodes. Constructed in a single silicon chip, the LM329 uses active circuitry to buff er the internal zener allowing the devi ce to operate over a 0.5 mA to 15 mA ra nge with virtually no change in perform ance. The LM329 is available with a tem perature coefficients of 0.01%/°C. Thi s reference also has excellent long ter m stability and low noise. A new subsur face breakdown zener used in the LM329 gives lower noise and better long-term stability than conventional IC zeners. Further t.
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