STL33N60DM6 N-channel MOSFET Datasheet

STL33N60DM6 Datasheet, PDF, Equivalent


Part Number

STL33N60DM6

Description

N-channel MOSFET

Manufacture

STMicroelectronics

Total Page 15 Pages
Datasheet
Download STL33N60DM6 Datasheet


STL33N60DM6
STL33N60DM6
Datasheet
N-channel 600 V, 125 mΩ typ., 21 A, MDmesh DM6 Power MOSFET
in a PowerFLAT 8x8 HV package
5
432
1
PowerFLAT™ 8x8 HV
Drain(5)
Gate(1)
Driver
source (2)
Power
source (3, 4)
NG1DS2PS34D5Z
Features
Order code
VDS
RDS(on) max.
STL33N60DM6
600 V
140 mΩ
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
ID
21 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STL33N60DM6
Product summary
Order code
STL33N60DM6
Marking
33N60DM6
Package
PowerFLAT 8x8 HV
Packing
Tape and reel
DS12985 - Rev 1 - April 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

STL33N60DM6
STL33N60DM6
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 21 A, di/dt ≤ 900 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on FR-4 board of inch², 2oz Cu.
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
±25
21
13
80
150
50
100
-55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value
0.83
45
Unit
°C/W
°C/W
Value
4
360
Unit
A
mJ
DS12985 - Rev 1
page 2/15


Features STL33N60DM6 Datasheet N-channel 600 V, 1 25 mΩ typ., 21 A, MDmesh DM6 Power MOS FET in a PowerFLAT 8x8 HV package 5 43 2 1 PowerFLAT™ 8x8 HV Drain(5) Gate( 1) Driver source (2) Power source (3, 4) NG1DS2PS34D5Z Features Order code VDS RDS(on) max. STL33N60DM6 600 V 140 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% ava lanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 21 A Applications • Switching applicatio ns Description This high-voltage N-cha nnel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compare d with the previous MDmesh fast generat ion, DM6 combines very low recovery cha rge (Qrr), recovery time (trr) and exce llent improvement in RDS(on) per area w ith one of the most effective switching behaviors available in the market for the most demanding high-efficiency brid ge topologies and ZVS phase-shift converters. Product status link STL33N60DM6 Pr.
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