N-Channel MOSFET. WFD7N65L Datasheet


WFD7N65L MOSFET. Datasheet pdf. Equivalent


Part Number

WFD7N65L

Description

Silicon N-Channel MOSFET

Manufacture

WINSEMI

Total Page 8 Pages
Datasheet
Download WFD7N65L Datasheet


WFD7N65L
WFD7N65L Product Description
Silicon N-Channel MOSFET
Features
7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V
Ultra-low Gate Charge(Typical 21nC)
Fast Switching Capability
100%Avalanche Tested
Improved dv/dt capability
General Description
This Power MOSFET is produced using advanced planar stripe,VDMOS
technology. This technology has been especially designed to minimize on -state
resistance,have a high rugged avalanche characteristics. This devices is
specially well suited for high efficiency switch mode power supplies , power
factor correction, UPS and a electronic lamp ballast base on half bridge.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS
EAS
EAR
IAR
dv/dt
PD
TJ,Tstg
TL
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
650
7
3.2
28
±30
232
12
7.5
10
40
-55~150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ ns
W
Value
Units
Min Typ Max
- - 1.04 /W
- - 62.5 /W
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WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WT-F152-Rev.A0 Jul.2018(SF0)
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0718

WFD7N65L
WFD7N65L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS VGS=±30V,VDS=0V
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
Breakdown voltage Temperature
Coefficient
BVDSS/TJ ID=250µA,Referenced to 25
Drain cut -off current
VDS=650V,VGS=0V
IDSS
VDS=520V, TC=125
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
Gate threshold voltage
VGS(th)
VDS = VGS,ID=250 µA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=3.5A
Forward Transconductance
gfs VDS=40V,ID=7A
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
Turn-On rise time
Turn-On delay time
Switching time
Turn-Off Fall time
Turn-Off delay time
tr
td(on)
tf
td(off)
VDD=300V,
ID=7A
RG=25Ω
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
VDD=480V,
Qg
VGS=10V,
Gate-source charge
Gate-drain("miller") Charge
Qgs ID=7.5A
Qgd (Note4,5)
Min
-
±30
-
-
650
2
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
0.8
-
-
-
1.0
3
1052
12
85
34
12
41
46
21
4.9
6.6
Max
±100
-
-
10
100
-
4
1.45
-
-
-
-
-
-
-
-
-
-
-
Unit
nA
V
V/
µA
V
V
S
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=7.5A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr IDR=7.5A,VGS=0V,
Qrr dIDR / dt =100 A / µs
Min Type Max
- - 7.5
- - 40
- - 1.4
- 366 -
- 3.5 -
Unit
A
A
V
ns
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=10mH IAS=10A,VDD=50V,RG=25Ω ,Starting TJ=25
3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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Features WFD7N65L Product Description Silicon N-C hannel MOSFET Features � 7A,650V,RDS( on)(TYP:1.0Ω)@VGS=10V � Ultra-low G ate Charge(Typical 21nC) � Fast Switc hing Capability � 100%Avalanche Teste d � Improved dv/dt capability General Description This Power MOSFET is produ ced using advanced planar stripe,VDMOS technology. This technology has been es pecially designed to minimize on -state resistance,have a high rugged avalanch e characteristics. This devices is spec ially well suited for high efficiency s witch mode power supplies , power facto r correction, UPS and a electronic lamp ballast base on half bridge. D G S A bsolute Maximum Ratings Symbol Paramet er VDSS ID Drain Source Voltage Conti nuous Drain Current(@Tc=25℃) Continuo us Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS EAS EAR IAR dv/dt PD TJ,Tstg TL Gate to Source Voltage S ingle Pulsed Avalanche Energy Repetitiv e Avalanche Energy Avalanche Current Pe ak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage .
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