Junction Transistor. H13003AH Datasheet


H13003AH Transistor. Datasheet pdf. Equivalent


Part Number

H13003AH

Description

Bipolar Junction Transistor

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download H13003AH Datasheet


H13003AH
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
H13003AH
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Computer aided power and
Switch-mode power supplies
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
TO-126D
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
880
700
9
2.5
1.25
22
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=880V, IE=0
VCE=700V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=200mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
IC=250mA (UI9600)
VCE=10V,IC=100mA,
f=1MHz
VALUE
MIN TYP MAX
880
700
9
10
20
10
8
15 30
0.6
1.2
0.5
0.5
1.5 3.5
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
4 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013

H13003AH
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
10
Ta=25
1.0
25
20
15
H13003AH
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
0.1
0.01
1 10 100 1000
Fig3 Static Characteristic
0.8
IB=40mA
Ta=25
10
5
Ptot-Ta
0
0 50
100 150
Fig4 hFE-IC
100
Ta=25
0.4
IB=8mA
IB=4mA
0
0
5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
10
VCE=5V
1
1mA 0.01
0.1
IC (A)
1
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
10
1
0.01
0.1
1
Ic (A)
3
0.5
0.1
1
Ic (A)
3
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Features R www.jdsemi.cn ShenZhen Jingdao Elect ronic Co.,Ltd. H13003AH Bipolar Juncti on Transistor ◆Si NPN ◆RoHS COMPLI ANT 1.APPLICATION Computer aided pow er and Switch-mode power supplies 2. FEATURES High voltage capability Featu res of good high temperature High switc hing speed 3.PACKAGE TO-126D 4.El ectrical Characteristics 4.1 Absolute M aximum Ratings 1 Base(B) 2 Collector(C ) 3 Emitter(E) Tamb= 25℃ unless spec ified PARAMETER SYMBOL VALUE UNIT C ollector-Base Voltage Collector-Emitto r Voltage Emittor- Base Voltage Colle ctor Current Power Dissipation Ta=25 Tc=25℃ Junction Temperature Stor age Temperature 4.2 Electrical Paramet er Tamb= 25℃ unless specified PARAME TER SYMBOL Collector-Base Voltage Col lector-Emittor Voltage Emittor-Base Vol tage Collector-Base Cutoff Current Coll ector-Emittor Cutoff Current Emittor-Ba se Cutoff Current DC Current Gain Colle ctor-Emittor Saturation Voltage Base-Em ittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency B.
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