N-Channel MOSFET. FQP7N65 Datasheet


FQP7N65 MOSFET. Datasheet pdf. Equivalent


Part Number

FQP7N65

Description

7A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQP7N65 Datasheet


FQP7N65
FQP7N65/FQPF7N65
650V, 7A N-Channel MOSFET
General Description
Product Summary
The FQP7N65 & FQPF7N65 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
750V@150
7A
< 1.56
TO-220
Top View
TO-220F
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FAQOPT7N65
FAQOPTF7N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
7 7*
4.4 4.4*
24
3.4
173
347
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
192 38.5
1.5 0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP7N65
65
0.5
FQPF7N65
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.65
3.25
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQP7N65
FQP7N65/FQPF7N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
gFS Forward Transconductance
VDS=40V, ID=3.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
650
750
0.74
1
10
±100
3 4 4.5
1.3 1.56
8
0.75 1
7
24
V
V/ oC
µA
nΑ
V
S
V
A
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
710 887 1060
60 77 92
5.5 7
9
1.9 3.8 5.8
pF
pF
pF
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
15 19 23
Gate Source Charge
VGS=10V, VDS=520V, ID=7A
4 4.9 6
Gate Drain Charge
6.5 8.3 10
Turn-On DelayTime
22 31
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=325V, ID=7A, RG=25
47 66
54 76
Turn-Off Fall Time
37 52
Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V
220 280 340
3 4.2 5
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.4A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP7N65/FQPF7N65 650V, 7A N-Channel MOSF ET General Description Product Summar y The FQP7N65 & FQPF7N65 have been fab ricated using an advanced high voltage MOSFET process that is designed to deli ver high levels of performance and robu stness in popular AC-DC applications. B y providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabil ity these parts can be adopted quickly into new and existing offline power sup ply designs. VDS ID (at VGS=10V) RDS(O N) (at VGS=10V) 100% UIS Tested 100% Rg Tested 750V@150℃ 7A < 1.56Ω TO-2 20 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherw ise noted Parameter Symbol FAQOPT7N6 5 FAQOPTF7N65 Drain-Source Voltage V DS 650 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC =100°C Pulsed Drain Current C Avalan che Current C Repetitive avalanche ene rgy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 7 7* 4.4 4.4* 24 3.4 173 347 5 TC=25°C Power Dissipati.
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