FQP5N60 N-Channel MOSFET Datasheet

FQP5N60 Datasheet, PDF, Equivalent


Part Number

FQP5N60

Description

5A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQP5N60 Datasheet


FQP5N60
FQP5N60/FQPF5N60
600V,5A N-Channel MOSFET
General Description
Product Summary
The FQP5N60 & FQPF5N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=12V)
100% UIS Tested
100% Rg Tested
600V@150
5A
<1.9
TO-220
Top View
TO-220F
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP4N60
FQPF4N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
5 5*
2.9 2.9*
16
2.5
99
200
50
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
108
0.83
38
0.28
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP5N60
65
0.5
FQPF5N60
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
3.6
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQP5N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A
gFS Forward Transconductance
VDS=40V, ID=2A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600
600
V
0.69
V/ oC
1
µA
10
±100 nΑ
2 3 4.5 V
1.7 2.0
7.4 S
0.77 1
V
5A
16 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
400 511 615
40 51 65
3.5 4.4 5.3
3.3 4.2 6.3
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=5A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
15 18
3 3.6
7.6 9.1
20.2 30
28.7 42
36 51
27 40
212 254
1.6 1.9
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.5A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP5N60/FQPF5N60 600V,5A N-Channel MOSFE T General Description Product Summary The FQP5N60 & FQPF5N60 have been fabr icated using an advanced high voltage M OSFET process that is designed to deliv er high levels of performance and robus tness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a long with guaranteed avalanche capabili ty these parts can be adopted quickly i nto new and existing offline power supp ly designs. VDS ID (at VGS=10V) RDS(ON ) (at VGS=12V) 100% UIS Tested 100% Rg Tested 600V@150℃ 5A <1.9 Ω TO-220 Top View TO-220F D G S Absolute M aximum Ratings TA=25°C unless otherwis e noted Parameter Symbol FQP4N60 FQ PF4N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuo us Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Curr ent C Repetitive avalanche energy C S ingle plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 5 5* 2.9 2.9* 16 2.5 99 200 50 5 TC=2.
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