MC33GD3100 gate driver Datasheet

MC33GD3100 Datasheet, PDF, Equivalent


Part Number

MC33GD3100

Description

Advanced IGBT/SiC gate driver

Manufacture

NXP

Total Page 18 Pages
Datasheet
Download MC33GD3100 Datasheet


MC33GD3100
MC33GD3100
Advanced IGBT/SiC gate driver
Rev. 9.0 — 5 March 2020
Product short data sheet
1 General description
The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power
devices. Integrated Galvanic isolation and low on-resistance drive transistors provide
high charging and discharging current, low dynamic saturation voltage and rail-to-rail
gate voltage control.
Current and temperature sense minimizes IGBT stress during faults. Accurate and
configurable under voltage lockout (UVLO) provides protection while ensuring sufficient
gate drive voltage headroom.
The MC33GD3100 autonomously manages severe faults and reports faults and status
via INTB pin and an SPI interface. It is capable of directly driving gates of most IGBTs
and SiC MOSFETs. Self test, control and protection functions are included for design
of high reliability systems (ASIL C/D). It meets the stringent requirements of automotive
applications and is fully AEC-Q100 grade 1 qualified.

MC33GD3100
NXP Semiconductors
MC33GD3100
Advanced IGBT/SiC gate driver
2 Simplified application diagram
VBATT1
VBATT2
Backup power
supply
VDD
(opt)
VSUP
(opt)
Redundant
5.0 V supply
FS6500
5.0 V
2X
VCC_LU
GND2_LU
VCC_LV
GND2_LV
VCC_LW
GND2_LW
Single flyback powers all three
low-side gate drives.
High-side supplies are
similarly created.
These are powered by
VBATT or the backup
power supply when
VBATT is lost.
VSUP VDD_LU VDD_HU
Safing logic
FSSTATEH
FSSTATEL
FSENB
VSUP
VDD_HU
INTH
PWMH
TIMER_INH
MPC5744P
MPC5777C
CSB
MOSI
MISO
SCLK
INTL
PWML
TIMER_INL
GND1
VSUP
VDD_LU
Isolation
barrier
VCC_HU
VSUP
GND2
NC2
VREF
VDD
TSENSEA
CSB
FSISO
GND1
VCC
MOSI
VCCREG
MISO
AMUXIN
SCLK
GH
INTB MC33GD3100 AMC
PWM
VEE
PWMALT
GL
AOUT
VEE
NC13
ISENSE
FSSTATE
DESAT
FSENB
CLAMP
GND1
GND2
RGH
RGL
GND2_HU
VCC_LU
VSUP
GND2
NC2
VREF
VDD
TSENSEA
CSB
FSISO
GND1
VCC
MOSI
VCCREG
MISO
AMUXIN
SCLK
GH
MC33GD3100
INTB
AMC
PWM
VEE
PWMALT
GL
AOUT
VEE
NC13
ISENSE
FSSTATE
DESAT
FSENB
CLAMP
GND1
GND2
RGH
RGL
GND2_LU
Figure 1. Simplified application diagram
GND2_HU
+DC Link
TSENSEA
TSENSEK
GND2_LU
PHASEU
TSENSEA
TSENSEK
- DC Link
aaa-024500
MC33GD3100_SDS
Product short data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9.0 — 5 March 2020
© NXP B.V. 2020. All rights reserved.
2 / 18


Features SOIC32 MC33GD3100 Advanced IGBT/SiC gat e driver Rev. 9.0 — 5 March 2020 Pro duct short data sheet 1 General descri ption The MC33GD3100 is an advanced sin gle channel gate driver for IGBTs and S iC power devices. Integrated Galvanic i solation and low on-resistance drive tr ansistors provide high charging and dis charging current, low dynamic saturatio n voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT stress during faults. A ccurate and configurable under voltage lockout (UVLO) provides protection whil e ensuring sufficient gate drive voltag e headroom. The MC33GD3100 autonomously manages severe faults and reports faul ts and status via INTB pin and an SPI i nterface. It is capable of directly dri ving gates of most IGBTs and SiC MOSFET s. Self test, control and protection fu nctions are included for design of high reliability systems (ASIL C/D). It mee ts the stringent requirements of automo tive applications and is fully AEC-Q100 grade 1 qualified. NXP S.
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