23N50E POWER MOSFET Datasheet

23N50E Datasheet, PDF, Equivalent


Part Number

23N50E

Description

N-CHANNEL POWER MOSFET

Manufacture

UTC

Total Page 5 Pages
Datasheet
Download 23N50E Datasheet


23N50E
UNISONIC TECHNOLOGIES CO., LTD
23N50E
Preliminary
23A, 500V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The 23N50E uses advanced UTC technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch, in PWM
applications, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
„ FEATURES
* RDS(ON) < 245m@VGS = 10V
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
23N50EL-T47-T
23N50EG-T47-T
23N50EL-T3P-T
23N50EG-T3P-T
23N50EL-T3N-T
23N50EG-T3N-T
Package
TO-247
TO-3P
TO-3PN
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
„ MARKING INFORMATION
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-A35.c

23N50E
23N50E
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
Continuous Drain Current Continuous (VGS=0V)
VGSS
ID
±30
±23
V
A
Pulsed Drain Current
Pulsed (Note 2)
IDM
±92
A
Avalanche Current (Note2)
IAR 23 A
Avalanche Energy
Repetitive(Note2)
Single Pulsed(Note3)
EAR
EAS
31.5
767.3
mJ
Power Dissipation
TA=25°С
TC=25°С
TO-247
TO-3P/TO-3PN
TO-247
TO-3P/TO-3PN
PD
2.50
3.00
W
315
416
W
Peak Diode Recovery dv/dt (Note4)
dv/dt
5.4 V/ns
Junction Temperature
TJ
+150
°С
Strong Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. IAS=21A, L=3.4mH, VDD=50V, RG=50, Starting TJ=25°С
4. ISDID, di/dt100A/µs, VDD500V, TJ150°С, Suggested=2.35.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-247
TO-3P/TO-3PN
TO-247
TO-3P/TO-3PN
SYMBOL
θJA
θjC
RATINGS
50
30
0.4
0.3
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-A35.c


Features UNISONIC TECHNOLOGIES CO., LTD 23N50E Preliminary 23A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The 23N50E uses advanced UTC technology to provide exce llent RDS(ON), low gate charge and oper ation with low gate voltages. This devi ce is suitable for use as a load switch , in PWM applications, motor controls, inverters, choppers, audio amplifiers a nd high energy pulse circuits. „ FEATU RES * RDS(ON) < 245mΩ@VGS = 10V * Fas t switching capability * Avalanche ener gy specified * Improved dv/dt capabilit y „ SYMBOL 2.Drain Power MOSFET 1.Ga te 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Fre e 23N50EL-T47-T 23N50EG-T47-T 23N50E L-T3P-T 23N50EG-T3P-T 23N50EL-T3N-T 23N50EG-T3N-T Package TO-247 TO-3P TO- 3PN Pin Assignment 123 GDS GDS GDS Pa cking Tube Tube Tube „ MARKING INFORM ATION www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A35.c 23N50E Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS .
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