STW12N170K5 Power MOSFET Datasheet

STW12N170K5 Datasheet, PDF, Equivalent


Part Number

STW12N170K5

Description

N-channel Power MOSFET

Manufacture

STMicroelectronics

Total Page 14 Pages
Datasheet
Download STW12N170K5 Datasheet


STW12N170K5
STW12N170K5
Datasheet
N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh™ K5 Power MOSFET
in a TO247 package
3
2
1
TO-247
Features
Order code
VDS
RDS(on) max.
STW12N170K5
1700 V
2.9 Ω
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
ID
5A
PTOT
250 W
D(2, TAB)
Applications
• Switching applications
G(1)
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary vertical structure. The result is a
S(3) AM01475V1 dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.
Product status link
STW12N170K5
Product summary
Order code
STW12N170K5
Marking
12N170K5
Package
TO-247
Packing
Tube
DS12847 - Rev 1 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com

STW12N170K5
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current at TC = 25 °C
ID
Drain current at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
TJ Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area
2. ISD ≤ 5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS
3. VDS ≤ 1360 V
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-amb
Table 3. Avalanche characteristics
Symbol
Parameter
IAR(1)
Maximum current during repetitive or single pulse avalanche
EAS(2)
Single pulse avalanche energy
1. Pulse width limited by TJmax
2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V
STW12N170K5
Electrical ratings
Value
±30
5
3
10
250
4.5
50
-55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value
0.5
50
Unit
°C/W
°C/W
Value
1.7
1000
Unit
A
mJ
DS12847 - Rev 1
page 2/14


Features STW12N170K5 Datasheet N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh™ K5 Power MO SFET in a TO‑247 package 3 2 1 TO-24 7 Features Order code VDS RDS(on) m ax. STW12N170K5 1700 V 2.9 Ω • I ndustry’s lowest RDS(on) x area • I ndustry’s best FoM (figure of merit) • Ultra-low gate charge • 100% aval anche tested • Zener-protected ID 5A PTOT 250 W D(2, TAB) Applications • Switching applications G(1) Descri ption This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The re sult is a S(3) AM01475V1 dramatic reduc tion in on-resistance and ultra-low gat e charge for applications requiring sup erior power density and high efficiency . Product status link STW12N170K5 Pro duct summary Order code STW12N170K5 Marking 12N170K5 Package TO-247 Pac king Tube DS12847 - Rev 1 - November 2018 For further information contact yo ur local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. A.
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