STS26N3LLH6 Power MOSFET Datasheet

STS26N3LLH6 Datasheet, PDF, Equivalent


Part Number

STS26N3LLH6

Description

N-channel Power MOSFET

Manufacture

STMicroelectronics

Total Page 14 Pages
Datasheet
Download STS26N3LLH6 Datasheet


STS26N3LLH6
STS26N3LLH6
N-channel 30 V, 0.0038 , 26 A, SO-8
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STS26N3LLH6
VDSS
30 V
RDS(on)
max
0.0044
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
ID
26 A
Applications
Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
8 76 5
1 2 34
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS26N3LLH6
Marking
26G3L
Packag
SO-8
Packaging
Tape and reel
October 2011
Doc ID 019030 Rev 2
1/14
www.st.com
14

STS26N3LLH6
Contents
Contents
STS26N3LLH6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 019030 Rev 2


Features STS26N3LLH6 N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ P ower MOSFET Features Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω RDS(on) * Qg industry benchmark ■ E xtremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switchi ng gate charge ID 26 A Applications Switching applications Description This product utilizes the 6th generatio n of design rules of ST’s proprietary STripFET™ technology, with a new gat e structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all pack ages. 8 76 5 1 2 34 SO-8 Figure 1. Int ernal schematic diagram Table 1. Devic e summary Order code STS26N3LLH6 Marki ng 26G3L Packag SO-8 Packaging Tape a nd reel October 2011 Doc ID 019030 Re v 2 1/14 www.st.com 14 Contents Cont ents STS26N3LLH6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . ..
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