AP4P018M POWER MOSFET Datasheet

AP4P018M Datasheet, PDF, Equivalent


Part Number

AP4P018M

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 8 Pages
Datasheet
Download AP4P018M Datasheet


AP4P018M
Advanced Power
Electronics Corp.
AP4P018M
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
D
Fast Switching Characteristic
Simple Drive Requirement
G
RoHS Compliant & Halogen-Free
S
Description
AP4P018 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
BVDSS
RDS(ON)
ID3
D
D
D
D
-40V
18mΩ
-9.4A
G
S SS
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation3
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
-40
+20
-9.4
-7.5
-40
2.5
18
-55 to 150
-55 to 150
V
V
A
A
A
W
mJ
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
50
Unit
/W
1
201705021

AP4P018M
AP4P018M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=-250uA
VGS=-10V, ID=-9A
VGS=-4.5V, ID=-6A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-9A
VDS=-32V, VGS=0V
VGS=+20V, VDS=0V
ID=-6A
VDS=-20V
VGS=-4.5V
VDS=-20V
ID=-1A
RG=3.3Ω
VGS=-10V
VGS=0V
.VDS=-25V
f=1.0MHz
-40 - - V
- - 18 mΩ
- - 30 mΩ
-1 - -3 V
- 30 -
S
- - -10 uA
- - +100 nA
- 30 48 nC
- 9.5 - nC
- 8.5 - nC
- 10 - ns
- 5 - ns
- 120 - ns
- 44 - ns
- 3600 5760 pF
- 285 - pF
- 175 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-2.1A, VGS=0V
IS=-9A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 21 - ns
- 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 125 /W when mounted on Min. copper pad.
4.Starting Tj=25oC , VDD=-20V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features Advanced Power Electronics Corp. AP4P01 8M Halogen-Free Product P-CHANNEL ENHAN CEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Character istic ▼ Simple Drive Requirement G RoHS Compliant & Halogen-Free S Des cription AP4P018 series are from Advanc ed Power innovated design and silicon p rocess technology to achieve the lowest possible on-resistance and fast switch ing performance. It provides the design er with an extreme efficient device for use in a wide range of power applicati ons. The SO-8 package is widely prefer red for all commercial-industrial surfa ce mount applications and suited for lo w voltage applications such as DC/DC co nverters. BVDSS RDS(ON) ID3 D D D D - 40V 18mΩ -9.4A G S SS Absolute Maximu m Ratings@Tj=25o.C(unless otherwise spe cified) Symbol Parameter Rating Uni ts VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Curre nt3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dis.
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