FQP27P06 P-Channel MOSFET Datasheet

FQP27P06 Datasheet, PDF, Equivalent


Part Number

FQP27P06

Description

P-Channel MOSFET

Manufacture

On Semiconductor

Total Page 8 Pages
Datasheet
Download FQP27P06 Datasheet


FQP27P06
FQP27P06
P-Channel QFET® MOSFET
- 60 V, - 27 A, 70 m
Description
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• - 27 A, - 60 V, RDS(on) = 70 m(Max.) @ VGS = - 10 V,
ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
G
D
S
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
S
G
▶▲
D
FQP27P06
-60
-27
-19.1
-108
25
560
-27
12
-7.0
120
0.8
-55 to +175
300
FQP27P06
1.25
0.5
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2001 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FQP27P06/D

FQP27P06
Elerical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 A
-60 --
--
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = -250 A, Referenced to 25°C -- -0.06
--
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 150°C
-- --
-1
-- -- -10
IGSSF
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
-- -- -100
IGSSR
Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V
-- -- 100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = -250 A
VGS = -10 V, ID = -13.5 A
-2.0 --
-4.0
-- 0.055 0.07
gFS Forward Transconductance
Dynamic Characteristics
VDS = -30 V, ID = -13.5 A
-- 12.4
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 1100 1400
-- 510 660
-- 120 155
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -30 V, ID = -13.5 A,
RG = 25
-- 18 45
-- 185 380
-- 30 70
(Note 4)
--
90 190
VDS = -48 V, ID = -27 A,
-- 33 43
VGS = -10 V
-- 6.8
--
(Note 4)
--
18
--
Unit
V
V/°C
A
A
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -27 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/s
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Starting TJ = 25°C
3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
-- -- -27 A
--
-- -108
A
-- -- -4.0 V
-- 105
--
ns
-- 0.41
--
C
www.onsemi.com
2


Features FQP27P06 P-Channel QFET® MOSFET FQP27P 06 P-Channel QFET® MOSFET - 60 V, - 27 A, 70 mΩ Description This P-Channel enhancement mode power MOSFET is produc ed using ON Semiconductor’s proprieta ry planar stripe and DMOS technology. T his advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior sw itching performance and high avalanche energy strength. These devices are suit able for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, ID = - 13.5 A • Low Gate Charge (Typ. 33 nC) • Low Crss (Typ. 120 pF) • 100% Av alanche Tested • 175C Maximum Junc tion Temperature Rating G D S TO-220 Absolute Maximum Ratings TC = 25°C un less otherwise noted Symbol VDSS ID ID M VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drai n Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulse.
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