SBS811 Barrier Diode Datasheet

SBS811 Datasheet, PDF, Equivalent


Part Number

SBS811

Description

Schottky Barrier Diode

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download SBS811 Datasheet


SBS811
SBS811
Schottky Barrier Diode
30V, 2A, Low VF, Non-Monolithic Dual
VEC8 Common Cathode
SBS811 is Schottky barrier diode, Low VF, Non-monolithic dual VEC8
common cathode for high frequency rectification applications.
www.onsemi.com
Features
Small Switching Noise
Low Forward Voltage (IF=2A, VF max =0.40V)
Typical Applications
Switching Regulators
Converters
Choppers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
VRRM
VRSM
IO
30 V
30 V
2.0 A
Surge Forward Current
50Hz sine wave, 1 cycle
IFSM
10 A
Junction Temperature
Tj
55 to +125
C
Storage Temperature
Tstg
55 to +125
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ELECTRICAL CONNECTION
8765
1234
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
PACKING TYPE : TL
TL
MARKING
SD
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
August 2015 - Rev. 2
1
Publication Order Number :
SBS811/D

SBS811
SBS811
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Reverse Voltage
VR IR=2.0mA
30 V
Forward Voltage
VF
IF=1.0A
IF=2.0A
0.30 0.35 V
0.35 0.40 V
Reverse Current
IR VR=15V
1.25 mA
Interterminal Capacitance
C VR=10V, f=1MHz
75 pF
Reverse Recovery Time
trr IF= IR=100mA, See specified Test Circuit
20 ns
Thermal Resistance
Rth(j-a)1
Rth(j-a)2
When mounted in Cu-foiled area of
1.92mm2 0.03mm on glass epoxy substrate
When mounted on ceramic substrate
(1000mm2 0.8mm)
75 C/W
70 C/W
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
Duty10%
50
10s
100
--5V
10
trr
www.onsemi.com
2


Features SBS811 Schottky Barrier Diode 30V, 2A, L ow VF, Non-Monolithic Dual VEC8 Common Cathode SBS811 is Schottky barrier dio de, Low VF, Non-monolithic dual VEC8 co mmon cathode for high frequency rectifi cation applications. www.onsemi.com F eatures  Small Switching Noise  L ow Forward Voltage (IF=2A, VF max =0.40 V) Typical Applications  Switchi ng Regulators  Converters  Choppe rs SPECIFICATIONS ABSOLUTE MAXIMUM RAT ING at Ta = 25C (Note 1) Parameter Symbol Value Unit Repetitive Peak R everse Voltage Nonrepetitive Peak Rever se Surge Voltage Average Output Current VRRM VRSM IO 30 V 30 V 2.0 A Surge Forward Current 50Hz sine wave, 1 cycle IFSM 10 A Junction Temperature Tj 55 to +125 C Storage Temperatu re Tstg 55 to +125 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exce eded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CONNECTION .
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