SBRB1045G Power Rectifier Datasheet

SBRB1045G Datasheet, PDF, Equivalent


Part Number

SBRB1045G

Description

Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download SBRB1045G Datasheet


SBRB1045G
MBRB1045G,
MBRD1045G,
SBRB1045G,
SBRD81045T4G
Switch-mode
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metaltosilicon power diode. Stateoftheart
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Short Heat Sink Tab Manufactured Not Sheared!
SBRB and SBRD8 Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AECQ101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V0
Weight: 1.7 grams for D2PAK (approximately)
0.4 grams for DPAK (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
1
4
3
MARKING DIAGRAM
4
1
3
D2PAK
CASE 418B
AY WW
MBRB1045G
AKA
A = Assembly Location
Y = Year
WW = Work Week
MBRB1045 = Device Code
G = PbFree Package
AKA
= Diode Polarity
4 MARKING DIAGRAM
12
3
DPAK
CASE 369C
AYWW
B10
45G
A
Y
WW
B1045
G
= Assembly Location
= Year
= Work Week
= Device Code
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
July, 2019 Rev. 10
1
Publication Order Number:
MBRB1045/D

SBRB1045G
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR) TC = 135°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 135°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
45
10
20
150
(MBRB/SBRB)
70
(MBRD/SBRD)
V
A
A
A
Operating Junction and Storage Temperature Range (Note 1)
TJ, Tstg
65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
(MBRB1045G)
JunctiontoCase (Note 2)
JunctiontoAmbient (Note 2)
(MBRD1045G)
JunctiontoCase (Note 2)
JunctiontoAmbient (Note 2)
2. When mounted using minimum recommended pad size on FR4 board.
Symbol
RRqqJJCA
RqJC
RqJA
Value
1.0
50
2.43
68
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 10 Amps, TJ = 125°C)
(IF = 20 Amps, TJ = 125°C)
(IF = 20 Amps, TJ = 25°C)
VF
0.57
0.72
0.84
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
IR mA
15
0.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%
ORDERING INFORMATION
Device
Package
Shipping
MBRB1045G
50 Units / Rail
SBRB1045G
MBRB1045T4G
D2PAK
(PbFree)
50 Units / Rail
800 Units / Tape & Reel
SBRB1045T4G
800 Units / Tape & Reel
MBRD1045G
50 Units / Rail
MBRD1045T4G
SBRD81045T4G
DPAK
(PbFree)
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
SSBRD81045T4G
2,500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Features MBRB1045G, MBRD1045G, SBRB1045G, SBRD810 45T4G Switch-mode Schottky Power Rectif ier Surface Mount Power Package This se ries of Power Rectifiers employs the Sc hottky Barrier principle in a large met al−to−silicon power diode. State− of−the−art geometry features epitax ial construction with oxide passivation and metal overlay contact. Ideally sui ted for use in low voltage, high freque ncy switching power supplies, free whee ling diodes, and polarity protection di odes. Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @ 0.125 in • Short Heat Sink Tab Manufactured Not Sheared! • SBRB and SBRD8 Prefi xes for Automotive and Other Applicatio ns Requiring Unique Site and Control Ch ange Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and a re RoHS Compliant Mechanical Characteri stics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 grams for D2PAK (approximately.
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