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MBRF20200CTG

ON Semiconductor
Part Number MBRF20200CTG
Manufacturer ON Semiconductor
Description Schottky Power Rectifier
Published Mar 23, 2020
Detailed Description Switch-mode Schottky Power Rectifier MBRF20200CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle...
Datasheet PDF File MBRF20200CTG PDF File

MBRF20200CTG
MBRF20200CTG


Overview
Switch-mode Schottky Power Rectifier MBRF20200CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Guardring for Stress Protection • Epoxy Meets UL 94 V−0 @ 0.
125 in • Electrically Isolated.
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