MBRF20200CTG Power Rectifier Datasheet

MBRF20200CTG Datasheet, PDF, Equivalent


Part Number

MBRF20200CTG

Description

Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download MBRF20200CTG Datasheet


MBRF20200CTG
MBRF20200CTG
Switch-mode
Schottky Power Rectifier
The Switch−mode Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Guardring for Stress Protection
Epoxy Meets UL 94 V−0 @ 0.125 in
Electrically Isolated. No Isolation Hardware Required.
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 200 VOLTS
1
2
3
TO−220 FULLPAK
CASE 221AH
1
2
3
MARKING DIAGRAM
AYWW
B20200G
AKA
A
Y
WW
B20200
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
Package
Shipping
MBRF20200CTG TO−220
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 8
1
Publication Order Number:
MBRF20200CT/D

MBRF20200CTG
MBRF20200CTG
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM 200 V
VRWM
VR
Average Rectified Forward Current
(Rated VR) TC = 125°C
Per Leg
Per Package
IF(AV)
10 A
20
Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz) TC = 90°C
IFRM
20 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0 A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
−65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Per Leg)
Rating
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
ELECTRICAL CHARACTERISTICS (Per Leg)
RqJC
3.5 °C/W
Rating
Symbol
Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 10 Amp, TC = 25°C)
(iF = 10 Amp, TC = 125°C)
(iF = 20 Amp, TC = 25°C)
(iF = 20 Amp, TC = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 125°C)
DYNAMIC CHARACTERISTICS (Per Leg)
vF V
0.9
0.8
1.0
0.9
iR mA
1.0
50
Capacitance (VR = − 5.0 V, TC = 25°C, Freq. = 1.0 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%
CT 500 pF
100 10,000
70 TJ = 1505C
1,000
50
TJ = 150°C
TJ = 1255C
100
TJ = 1005C
20 10
TJ = 125°C
10
1
7 0.1
5
TJ = 100°C
TJ = 255C
0.01
0 20 40 60 80 100 120 140 160 180 200
TJ = 25°C
VR, REVERSE CURRENT (VOLTS)
2
Figure 2. Typical Reverse Current (Per Leg)
1
0.2
0.4 0.6
0.8
1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage (Per Leg)
www.onsemi.com
2


Features MBRF20200CTG Switch-mode Schottky Power Rectifier The Switch−mode Power Recti fier employs the Schottky Barrier princ iple in a large area metal−to−silic on power diode. State−of−the−art geometry features epitaxial constructio n with oxide passivation and metal over lay contact. Ideally suited for use as rectifiers in very low−voltage, high frequency switching power supplies, f ree wheeling diodes and polarity protec tion diodes. Features • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temp erature Capability • High dv/dt Capab ility • Guardring for Stress Protecti on • Epoxy Meets UL 94 V−0 @ 0.125 in • Electrically Isolated. No Isolat ion Hardware Required. • These Device s are Pb−Free and are RoHS Compliant Mechanical Characteristics: • Case: E poxy, Molded • Weight: 1.9 Grams (App roximately) • Finish: All External Su rfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purpo.
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