NSR05T30XV2 Barrier Diode Datasheet

NSR05T30XV2 Datasheet, PDF, Equivalent


Part Number

NSR05T30XV2

Description

30V Schottky Barrier Diode

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download NSR05T30XV2 Datasheet


NSR05T30XV2
NSR05T30XV2
500 mA, 30 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
Features
Low Forward Voltage Drop − 370 mV (Typ.) @ IF = 500 mA
Low Reverse Current − 52 mA (Typ.) @ VR = 30 V
500 mA of Continuous Forward Current
High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current
(60 Hz @ 1 cycle)
VR 30 V
IF 500 mA
IFSM
3.0
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
1.5
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
2
1
SOD−523
CASE 502
MARKING
DIAGRAM
YL
12
YL = Specific Device Code
M Date Code
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
NSR05T30XV2T5G SOD−523 8000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
April, 2017 − Rev. 0
1
Publication Order Number:
NSR05T30XV2/D

NSR05T30XV2
NSR05T30XV2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Max
489
250
358
350
Unit
°C/W
mW
°C/W
mW
°C
1000
D = 0.5
0.2
100
0.1
0.05
0.02
10
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01 0.1
PULSE TIME (sec)
1
Figure 1. Thermal Response (Note 1)
1000
D = 0.5
100 0.2
0.1
0.05
10 0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01 0.1
PULSE TIME (sec)
1
Figure 2. Thermal Response (Note 2)
10 100 1000
10 100 1000
www.onsemi.com
2


Features NSR05T30XV2 500 mA, 30 V Schottky Barri er Diode These Schottky barrier diodes are optimized for low forward voltage d rop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacin g saving micro−packaging ideal for sp ace constraint applications. Features Low Forward Voltage Drop − 370 mV (Typ.) @ IF = 500 mA • Low Reverse Cu rrent − 52 mA (Typ.) @ VR = 30 V • 500 mA of Continuous Forward Current High Switching Speed • These Device s are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applicat ions • LCD and Keypad Backlighting Camera Photo Flash • Buck and Boost dc−dc Converters • Reverse Voltage and Current Protection • Clamping & Protection MAXIMUM RATINGS Rating Sy mbol Value Unit Reverse Voltage Forwar d Current (DC) Forward Surge Current (6 0 Hz @ 1 cycle) VR 30 V IF 500 mA IF SM 3.0 A Repetitive Peak Forward Cur rent (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 1.5 A Stresses exceeding those listed in.
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