NXV08V110DB1 Power MOSFET Datasheet

NXV08V110DB1 Datasheet, PDF, Equivalent


Part Number

NXV08V110DB1

Description

Three Phase Inverter Automotive Power MOSFET

Manufacture

ON Semiconductor

Total Page 10 Pages
Datasheet
Download NXV08V110DB1 Datasheet


NXV08V110DB1
Three Phase Inverter
Automotive Power MOSFET
Module
NXV08V110DB1
Features
ThreePhase Inverter Bridge for Variable Speed Motor Drive
RC Snubber for Low EMI
Current Sensing and Temperature Sensing
Electrically Isolated DBC Substrate for Low Thermal Resistance
Compact Design for Low Total Module Resistance
Module Serialization for Full Traceability
AEC Qualified AQG324
PPAP Capable
This Device is Pbfree, RoHS and UL94V0 Compliant
Applications
24 V and 48 V Motor Control
DCDC Converter
Benefits
Enable Design of Small, Efficient and Reliable System for Reduced
Vehicle Fuel Consumption and CO2 Emission
Simplified Vehicle Assembly
Enable Low Thermal Resistance to JunctiontoHeat Sink by Direct
Mounting via Thermal Interface Material between Module Case and
Heat Sink
www.onsemi.com
19LD, APM, PDD STD
CASE MODCD
MARKING DIAGRAM
NXV08V110DB1
ZZZ ATYWW
NNNNNN
NXV08V110DB1
ZZZ
AT
Y
WW
NNN
= Specific Device Code
= Lot ID
= Assembly & Test Location
= Year
= Work Week
= Serial Number
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2016
October, 2019 Rev. 0
1
Publication Order Number:
NXV08V110DB1/D

NXV08V110DB1
NXV08V110DB1
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Package
PbFree and
RoHS Compliant
NXV08V110DB1
APM19CBC
yes
Operating
Temperature Range
40 125°C
Packing Method
Tube
Figure 1. Pin Configuration
PIN DESCRIPTION
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Pin Name
TEMP 1
TEMP 2
PHASE 3 SENSE
GATE 3
GATE 6
PHASE 2 SENSE
GATE 2
GATE 5
PHASE 1 SENSE
GATE 1
VBAT SENSE
GATE 4
SHUNT P
SHUNT N
VBAT
GND
PHASE 1
PHASE 2
PHASE 3
Pin Description
NTC Thermistor Terminal 1
NTC Thermistor Terminal 2
Source of Q3 and Drain of Q6
Gate of Q3, high side Phase 3 MOSFET
Gate of Q6, low side Phase 3 MOSFET
Source of Q2 and Drain of Q5
Gate of Q2, high side Phase 2 MOSFET
Gate of Q5, low side Phase 2 MOSFET
Source of Q1 and Drain of Q4
Gate of Q2, high side Phase 1 MOSFET
Sense pin for battery voltage and Drain of high side MOSFETs
Gate of Q4, low side Phase 1 MOSFET
Positive CSR sense pin and source connection for low side MOSFETs
Negative CSR sense pin and sense pin for battery return
Battery voltage power lead
Battery return power lead
Phase 1 power lead
Phase 2 power lead
Phase 3 power lead
www.onsemi.com
2


Features Three Phase Inverter Automotive Power MO SFET Module NXV08V110DB1 Features • T hree−Phase Inverter Bridge for Variab le Speed Motor Drive • RC Snubber for Low EMI • Current Sensing and Temper ature Sensing • Electrically Isolated DBC Substrate for Low Thermal Resistan ce • Compact Design for Low Total Mod ule Resistance • Module Serialization for Full Traceability • AEC Qualifie d − AQG324 • PPAP Capable • This Device is Pb−free, RoHS and UL94−V0 Compliant Applications • 24 V and 48 V Motor Control • DC−DC Converter Benefits • Enable Design of Small, Ef ficient and Reliable System for Reduced Vehicle Fuel Consumption and CO2 Emiss ion • Simplified Vehicle Assembly • Enable Low Thermal Resistance to Junct ion−to−Heat Sink by Direct Mounting via Thermal Interface Material between Module Case and Heat Sink www.onsemi. com 19LD, APM, PDD STD CASE MODCD MARKI NG DIAGRAM NXV08V110DB1 ZZZ ATYWW NNNNN N NXV08V110DB1 ZZZ AT Y WW NNN = Specific Device Code = Lot ID = Assembly & Test Location = Year = Work.
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