FDH3632 N-Channel MOSFET Datasheet

FDH3632 Datasheet, PDF, Equivalent


Part Number

FDH3632

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 17 Pages
Datasheet
Download FDH3632 Datasheet


FDH3632
MOSFET – Power, N-Channel,
POWERTRENCH)
100 V, 80 A, 9 mW
FDH3632, FDP3632,
FDB3632
Features
RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A
Qg (tot) = 84 nC (Typ.), VGS = 10 V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
These Devices are PbFree and are RoHS Compliant
Applications
Synchronous Rectification
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
www.onsemi.com
VDSS
100 V
RDS(ON) MAX
9 mW
D
ID MAX
80 A
G
S
TO2473
CASE 340CK
G
D
S
GDS
TO2203
CASE 340AT
D2PAK3
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
FDX3632
© Semiconductor Components Industries, LLC, 2017
December, 2019 Rev. 4
$Y
&Z
&3
&K
FDX3632
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
X = H/P/B
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1 Publication Order Number:
FDP3632/D

FDH3632
FDH3632, FDP3632, FDB3632
MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 111°C, VGS = 10 V)
Continuous (Tamb = 25°C, VGS = 10 V,
RqJA = 43°C/W)
100 V
±20 V
80 A
12
ID Drain Current
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
PD Power Dissipation
(TC = 25°C)
Derate Above 25°C
Figure 4
337
310
2.07
A
mJ
W
W/°C
TJ, TSTG
Operating and Storage Temperature Range
55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting TJ = 25°C, L = 0.12mH, IAS = 75 A, VDD = 80 V.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max. TO220, D2PAK, TO247
RqJA
Thermal Resistance, Junction to Ambient, Max. TO220 (Note 2)
RqJA
Thermal Resistance, Junction to Ambient, D2PAK, Max. 1 in2 copper pad area
RqJA
Thermal Resistance, Junction to Ambient, Max. TO247 (Note 2)
2. Pulse Width = 100 s
Value
0.48
62
43
30
Unit
_C/W
_C/W
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
FDB3632
FDB3632
D2PAK
FDP3632
FDP3632
TO220
FDH3632
FDH3632
TO247
Reel Size
330 mm
Tube
Tube
Tape Width
24 mm
N/A
N/A
Quantity
800 Units
50 Units
30 Units
www.onsemi.com
2


Features MOSFET – Power, N-Channel, POWERTRENCH ) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW ( Typ.), VGS = 10 V, ID = 80 A • Qg (to t) = 84 nC (Typ.), VGS = 10 V • Low M iller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repet itive Pulse) • These Devices are Pb Free and are RoHS Compliant Applicatio ns • Synchronous Rectification • Ba ttery Protection Circuit • Motor Driv es and Uninterruptible Power Supplies Micro Solar Inverter www.onsemi.com VDSS 100 V RDS(ON) MAX 9 mW D ID MA X 80 A G S TO−247−3 CASE 340CK G D S GDS TO−220−3 CASE 340AT D2PA K−3 CASE 418AJ MARKING DIAGRAM $Y&Z &3&K FDX3632 © Semiconductor Componen ts Industries, LLC, 2017 December, 2019 − Rev. 4 $Y &Z &3 &K FDX3632 = ON Semiconductor Logo = Assembly Plant Cod e = Data Code (Year & Week) = Lot = Spe cific Device Code X = H/P/B ORDERING I NFORMATION See detailed ordering and sh ipping information on page 2 of this data sheet. 1 Publication Order Number: FDP3632/D FDH3632, FD.
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