NSVMBT3904DW1 Purpose Transistors Datasheet

NSVMBT3904DW1 Datasheet, PDF, Equivalent


Part Number

NSVMBT3904DW1

Description

Dual General Purpose Transistors

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download NSVMBT3904DW1 Datasheet


NSVMBT3904DW1
MBT3904DW1,
MBT3904DW2,
SMBT3904DW1,
NSVMBT3904DW1
Dual General Purpose
Transistors
The MBT3904DW1 and MBT3904DW2 devices are a spin−off of
our popular SOT−23/SOT−323 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−363
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
hFE, 100−300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ESD
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
HBM Class 2
MM Class B
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
150 mW
833 °C/W
Junction and Storage
Temperature Range
TJ, Tstg − 55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
www.onsemi.com
MARKING
DIAGRAM
6
6
SOT−363/SC−88/
SC70−6
CASE 419B
XX MG
G
11
XX = MA for MBT3904DW1T1G
MJ for MBT3904DW2T1G
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MBT3904DW1T1
STYLE 1
(3) (2) (1)
Q2
Q1
(4) (5)
MBT3904DW2T1
STYLE 27
(6)
ORDERING INFORMATION
Device
Package Shipping
MBT3904DW1T1G,
MBT3904DW2T1G
SOT−363
3000 /
(Pb−Free) Tape & Reel
SMBT3904DW1T1G
SOT−363
3000 /
(Pb−Free) Tape & Reel
NSVMBT3904DW1T3G SOT−363 10000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 11
1
Publication Order Number:
MBT3904DW1T1/D

NSVMBT3904DW1
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
60
6.0
Vdc
Vdc
Vdc
nAdc
50
nAdc
50
hFE
VCE(sat)
VBE(sat)
40
70
100
60
30
0.65
300
0.2
0.3
0.85
0.95
Vdc
Vdc
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
MHz
300 −
pF
− 4.0
pF
− 8.0
kW
1.0 10
2.0 12
X 10− 4
0.5 8.0
0.1 10
100 400
100 400
mmhos
1.0 40
3.0 60
dB
− 5.0
www.onsemi.com
2


Features MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSV MBT3904DW1 Dual General Purpose Transi stors The MBT3904DW1 and MBT3904DW2 de vices are a spin−off of our popular S OT−23/SOT−323 three−leaded device . It is designed for general purpose am plifier applications and is housed in t he SOT−363 six−leaded surface mount package. By putting two discrete devic es in one package, this device is ideal for low−power surface mount applicat ions where board space is at a premium. Features • hFE, 100−300 • Low VC E(sat), ≤ 0.4 V • Simplifies Circui t Design • Reduces Board Space • Re duces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • S and NSV Prefix for Automotive an d Other Applications Requiring Unique S ite and Control Change Requirements; AE C−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen F ree/BFR Free and are RoHS Compliant MA XIMUM RATINGS Rating Symbol Value U nit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Conti.
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