STGP20M65DF2 low-loss IGBT Datasheet

STGP20M65DF2 Datasheet, PDF, Equivalent


Part Number

STGP20M65DF2

Description

low-loss IGBT

Manufacture

STMicroelectronics

Total Page 16 Pages
Datasheet
Download STGP20M65DF2 Datasheet


STGP20M65DF2
STGP20M65DF2
Datasheet
Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT
TAB
TO-220
1 23
Features
• High short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode
G(1)
C(2, TAB)
Applications
• Motor control
• UPS
• PFC
• General-purpose inverters
Description
E(3)
NG1E3C2T
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.
Product status link
STGP20M65DF2
Product summary
Order code
STGP20M65DF2
Marking
G20M65DF2
Package
TO-220
Packing
Tube
DS11374 - Rev 3 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com

STGP20M65DF2
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
ICP(1)
Pulsed collector current
VGE Gate-emitter voltage
Continuous forward current at TC = 25 °C
IF
Continuous forward current at TC = 100 °C
IFP(1)
Pulsed forward current
PTOT
Total dissipation at TC = 25 °C
TSTG
Storage temperature range
TJ Operating junction temperature range
1. Pulse width limited by maximum junction temperature.
Symbol
RthJC
RthJC
RthJA
Table 2. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
STGP20M65DF2
Electrical ratings
Value
650
40
20
80
±20
40
20
80
166
-55 to 150
-55 to 175
Unit
V
A
A
A
V
A
A
A
W
°C
°C
Value
0.9
2.08
62.5
Unit
°C/W
°C/W
°C/W
DS11374 - Rev 3
page 2/16


Features STGP20M65DF2 Datasheet Trench gate field -stop, 650 V, 20 A, M series low-loss I GBT TAB TO-220 1 23 Features • Hi gh short-circuit withstand time • VCE (sat) = 1.55 V (typ.) @ IC = 20 A • T ight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antipar allel diode G(1) C(2, TAB) Applicati ons • Motor control • UPS • PFC General-purpose inverters Descripti on E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietar y trench gate fieldstop structure. The device is part of the M series IGBTs, w hich represent an optimal balance betwe en inverter system performance and effi ciency where the low-loss and the short -circuit functionality is essential. Fu rthermore, the positive VCE(sat) temper ature coefficient and the tight paramet er distribution result in safer paralle ling operation. Product status link ST GP20M65DF2 Product summary Order code STGP20M65DF2 Marking G20M65DF2 Package TO-220 Packing Tube DS11374 - Rev 3.
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