AOB7S65L Power Transistor Datasheet

AOB7S65L Datasheet, PDF, Equivalent


Part Number

AOB7S65L

Description

Power Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 7 Pages
Datasheet
Download AOB7S65L Datasheet


AOB7S65L
AOT7S65L/AOB7S65L/AOTF7S65L/AOTF7S65
650V 7A α MOS TM Power Transistor
General Description
Product Summary
The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65
have been fabricated using the advanced αMOSTM high
voltage process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed
avalanche capability these parts can be adopted quickly into
new and existing offline power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
750V
30A
0.65
9.2nC
2µJ
TO-220
D
TO-220F
Top View
TO-263
D2PAK
D
D
AOT7S65
S
D
G
AOTF7S65(L)
S
GD
G
AOB7S65
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT7S65L/AOB7S65L
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
7
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
104
0.8
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT7S65L/AOB7S65L
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
AOTF7S65
650
±30
7*
5*
30
1.7
43
86
35
0.3
100
20
-55 to 150
300
AOTF7S65
65
--
3.6
G
S
AOTF7S65L
7*
5*
27
0.2
AOTF7S65L
65
--
4.7
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev.3.0 Sepetember 2017
www.aosmd.com
Page 1 of 7

AOB7S65L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.5A, TJ=25°C
VGS=10V, ID=3.5A, TJ=150°C
VSD Diode Forward Voltage
IS=3.5A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Crss
Rg
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0 to 480V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=3.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=3.5A,
RG=25
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=3.5A,dI/dt=100A/µs,VDS=400V
Peak Reverse Recovery Current
IF=3.5A,dI/dt=100A/µs,VDS=400V
Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V
Min Typ Max Units
650 -
-
700 750
-
V
- -1
µA
- 10 -
- - ±100 nΑ
2.6 3.3
4
V
- 0.54 0.65
- 1.48 1.64
- 0.82 1.2 V
- - 7A
- - 30 A
- 434 -
- 30 -
- 23 -
pF
pF
pF
- 80
-
-1-
- 17.5 -
pF
pF
- 9.2 - nC
- 2.5 - nC
- 2.7 - nC
- 21 - ns
- 14 - ns
- 55 - ns
- 15 - ns
- 224 -
- 19 -
ns
A
- 2.8 - µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0 Sepetember 2017
www.aosmd.com
Page 2 of 7


Features AOT7S65L/AOB7S65L/AOTF7S65L/AOTF7S65 650 V 7A α MOS TM Power Transistor Genera l Description Product Summary The AOT 7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advance d αMOSTM high voltage process that is designed to deliver high levels of perf ormance and robustness in switching app lications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanc he capability these parts can be adopte d quickly into new and existing offline power supply designs. VDS @ Tj,max ID M RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 750V 30A 0.6 5Ω 9.2nC 2µJ TO-220 D TO-220F Top View TO-263 D2PAK D D AOT7S65 S D G AOTF7S65(L) S GD G AOB7S65 S Abs olute Maximum Ratings TA=25°C unless o therwise noted Parameter Symbol AOT7 S65L/AOB7S65L Drain-Source Voltage VD S Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C P ulsed Drain Current C Avalanche Curren t C Repetitive avalanche energy C Single pulsed avalanche energy G I.
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