AON6794 N-Channel SRFET Datasheet

AON6794 Datasheet, PDF, Equivalent


Part Number

AON6794

Description

30V N-Channel SRFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AON6794 Datasheet


AON6794
AON6794
30V N-Channel SRFET
General Description
• Trench Power αMOS Technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
85A
< 2.8mΩ
< 3.5mΩ
Applications
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
PIN1
1
2
3
4
8
7
6
5
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Orderable Part Number
AON6794
Package Type
DFN 5x6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
Pulsed Drain Current C
TC=25°C
TC=100°C
ID
IDM
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.05mH
C
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Form
Tape & Reel
Minimum Order Quantity
3000
Maximum
30
±12
85
60
190
37
30
42
44
36
42
17
6.2
4
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Typ Max
15 20
40 50
2.4 3
Units
°C/W
°C/W
°C/W
Rev. 1.0: October 2014
www.aosmd.com
Page 1 of 6

AON6794
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=30V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±12V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Min
30
1.1
0.9
Typ
1.5
2.3
3.4
2.8
167
0.5
2150
710
70
1.8
37.5
17
5
5
7
3.5
36
6
15.5
33
Max Units
0.5
100
±100
1.9
2.8
4.1
3.5
0.7
30
V
mA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
2.7 Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev. 1.0: October 2014
www.aosmd.com
Page 2 of 6


Features AON6794 30V N-Channel SRFET General Des cription • Trench Power αMOS Technol ogy • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS a nd Halogen-Free Compliant Product Summ ary VDS ID (at VGS=10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS=4.5V) 30V 85A < 2.8mΩ < 3.5mΩ Applications • DC/ DC Converters in Computing • Isolated DC/DC Converters in Telecom and Indust rial 100% UIS Tested 100% Rg Tested T op View DFN5X6 Bottom View PIN1 Top View PIN1 1 2 3 4 8 7 6 5 G D SRF ETTM Soft Recovery MOSFET: Integrated S chottky Diode S Orderable Part Number AON6794 Package Type DFN 5x6 Absolute Maximum Ratings TA=25°C unless otherw ise noted Parameter Symbol Drain-Sou rce Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G Pulsed Drain Current C TC=25°C TC=100°C ID IDM Continuous Drain Current Avalanch e Current C TA=25°C TA=70°C Avalanc he energy L=0.05mH C IDSM IAS EAS VD S Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=.
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