AONE36132 N-Channel MOSFET Datasheet

AONE36132 Datasheet, PDF, Equivalent


Part Number

AONE36132

Description

25V Dual Asymmetric N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 8 Pages
Datasheet
Download AONE36132 Datasheet


AONE36132
General Description
• Bottom Source Technology
• Very Low RDS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant
Applications
• DC/DC Converters in PC, Servers
• Point of load Converters
DFN3.3x3.3A
Top View
Bottom View
AONE36132
25V Dual Asymmetric N-Channel MOSFET
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Q1 Q2
25V 25V
17A 34A
< 4.6mΩ < 1.4mΩ
< 6mΩ < 1.7mΩ
100% UIS Tested
100% Rg Tested
Top View
Transparent View
Pin 1
Orderable Part Number
AONE36132
Package Type
DFN3.3x3.3A
Form Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 25
25
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.01mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
±12
60G
38
160
17
13.5
48
12
25
10
±12
60G
60G
200
34
27
60
18
35.5
14
TA=25°C
Power Dissipation A TA=70°C
PDSM
2
1.3
2.5
1.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ Q1 Typ Q2 Max Q1 Max Q2
50 40 60 50
75 65 90 80
4 2.5
5
3.5
Units
°C/W
°C/W
°C/W
Rev.1.0: October 2017
www.aosmd.com
Page 1 of 8

AONE36132
AONE36132
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=25V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±12V
VDS=VGS, ID=250mA
VGS=10V, ID=17A
Static Drain-Source On-Resistance
VGS=4.5V, ID=15A
Forward Transconductance
VDS=5V, ID=17A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=12.5V, ID=17A
VGS=10V, VDS=12.5V,
RL=0.75W, RGEN=3W
IF=17A, di/dt=500A/ms
IF=17A, di/dt=500A/ms
Min
25
1
0.35
Typ
1.4
3.8
5.3
4.8
100
0.7
880
250
55
0.7
14.5
6.5
2.5
2.5
4.5
3.5
20
2.5
9
11.5
Max Units
1
5
±100
1.8
4.6
6.4
6
1
30
V
μA
nA
V
mΩ
S
V
A
pF
pF
pF
1.05 Ω
21 nC
10 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2017
www.aosmd.com
Page 2 of 8


Features General Description • Bottom Source Te chnology • Very Low RDS(ON) • High Current Capability • RoHS and Halogen -Free Compliant Applications • DC/DC Converters in PC, Servers • Point of load Converters DFN3.3x3.3A Top View Bottom View AONE36132 25V Dual Asymm etric N-Channel MOSFET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=1 0V) RDS(ON) (at VGS=4.5V) Q1 Q2 25V 25 V 17A 34A < 4.6mΩ < 1.4mΩ < 6mΩ < 1. 7mΩ 100% UIS Tested 100% Rg Tested T op View Transparent View Pin 1 Order able Part Number AONE36132 Package Typ e DFN3.3x3.3A Form Minimum Order Quant ity Tape & Reel 3000 Absolute Maximu m Ratings TA=25°C unless otherwise not ed Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 25 25 Gate- Source Voltage Continuous Drain TC=25 °C Current TC=100°C Pulsed Drain C urrent C Continuous Drain Current Aval anche Current C TA=25°C TA=70°C Ava lanche energy L=0.01mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD ±12 60G 38 160 17 13.5 48 12 2.
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