AONR21321 P-Channel MOSFET Datasheet

AONR21321 Datasheet, PDF, Equivalent


Part Number

AONR21321

Description

30V P-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AONR21321 Datasheet


AONR21321
AONR21321
30V P-Channel MOSFET
General Description
• Latest Advanced Trench Technology
• Low RDS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant
Applications
• Notebook AC-in Load Switch
• Battery Protection Charge/Discharge
Product Summary
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
100% UIS Tested
100% Rg Tested
-30V
-24A
< 16.5mΩ
< 29.5mΩ
DFN 3x3_EP
Top View
Bottom View
Pin 1
PIN1
Top View
18
27
36
45
D
G
S
Orderable Part Number
AONR21321
Package Type
DFN 3x3 EP
Form
Tape & Reel
Minimum Order Quantity
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±25
-24
-20
-66
-13
-10
25
31
24
9.6
4.1
2.6
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
47
4.2
Max
30
60
5.2
Units
°C/W
°C/W
°C/W
Rev.1.0: November 2017
www.aosmd.com
Page 1 of 6

AONR21321
AONR21321
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±25V
VDS=VGS, ID=-250µA
VGS=-10V, ID=-12A
VGS=-4.5V, ID=-10A
Forward Transconductance
VDS=-5V, ID=-12A
Diode Forward Voltage
IS=-1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-12A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.3,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-12A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=-12A, di/dt=500A/µs
Min
-30
-1.3
Typ
-1.8
13.5
19.5
23
25
-0.72
1180
185
155
5
21
11
6
3
10.5
8.5
30
11.5
10
15
Max Units
-1
-5
±100
-2.3
16.5
23.5
29.5
-1
-24
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
10 Ω
34 nC
18 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2017
www.aosmd.com
Page 2 of 6


Features AONR21321 30V P-Channel MOSFET General Description • Latest Advanced Trench Technology • Low RDS(ON) • High Cur rent Capability • RoHS and Halogen-Fr ee Compliant Applications • Notebook AC-in Load Switch • Battery Protectio n Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -30V -24A < 16.5mΩ < 29.5mΩ DFN 3x3_EP Top View Bottom View Pin 1 PIN1 Top View 18 27 36 4 5 D G S Orderable Part Number AONR213 21 Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Ab solute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Dra in-Source Voltage VDS Gate-Source Vol tage Continuous Drain TC=25°C Curren t G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Cur rent C TA=25°C TA=70°C Avalanche en ergy L=0.1mH TC=25°C Power Dissipatio n B TC=100°C C VGS ID IDM IDSM IAS E AS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Ran.
Keywords AONR21321, datasheet, pdf, Alpha & Omega Semiconductors, 30V, P-Channel, MOSFET, ONR21321, NR21321, R21321, AONR2132, AONR213, AONR21, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)